Low-power consumption reference voltage source

Abstract

The invention belongs to the technical field of integrated circuits, and specifically relates to a low-power consumption reference voltage source. According to the low-power consumption reference voltage source disclosed by the invention, a resistance-free design is adopted, and temperature influence of MOS (Metal Oxide Semiconductor) transistors can be removed through current-voltage and voltage-current conversion circuits; the effect of high-order temperature compensation can be achieved while positive temperature coefficient compensation is carried out, other circuits are prevented from being designed for carrying out high-order temperature compensation, and the layout area and the power consumption are reduced; meanwhile, even though a circuit adopts a cascode structure for increasing a power supply rejection ratio, the power supply voltage of the circuit still can be up to 0.9V, the power consumption is further reduced, and nanowatt level can be achieved. To sum up, the reference voltage source having low consumption, small layout area and high-order temperature compensation is realized.

Description

technical field [0001] The invention belongs to the technical field of integrated circuits, in particular to reference circuits in integrated circuits, and in particular to a reference voltage source with low power consumption. Background technique [0002] As an essential module in the integrated circuit, the reference voltage source can provide other analog and digital modules with accurate output signals that do not vary with temperature, power supply voltage and process. It is used in data converters, linear regulators, switching power supplies and Digital memory has a wide range of applications. With the ever-changing development of society, in order to have better market competitiveness, portable devices need lower power consumption and longer life, and have stable power supply voltage under different temperature environments, so a low-voltage A reference voltage source with low power consumption and near-zero temperature coefficient becomes inevitable. [0003] In t...

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Problems solved by technology

[0004] In order to achieve low power consumption performance, it is necessary to operate the MOS transistor in the sub-threshold region. To prevent the MOS transistor from operating at the boundary between the sub-threshold region and the saturation region, the gate-source voltage of the MOS transistor should be less than the threshold voltage, and the drain-source voltage should be at least greater than 0.1 V; In order to achieve high-order compensation effects, most of the past research is to add additional circuits, which not only increases the power consumption of the circuit but also increases the layout area, which poses a new challenge for researchers

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