Photoconductive switch that reduces on-resistance and preparation method thereof
A technology of photoconductive switch and on-resistance, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of not paying attention to the energy utilization of devices, etc., to reduce the on-resistance, improve the working life and stability, and enhance the absorption efficiency Effect
Active Publication Date: 2017-11-21
SHANDONG UNIV
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Abstract
The invention relates to a photoconductive switch that reduces on-resistance and a preparation method thereof. The photoconductive switch comprises a gallium arsenide substrate. An antireflection film is arranged on one surface of the substrate. Electrodes are respectively arranged on two sides of the other surface of the substrate. A high-reflective film is arranged between the two electrodes. The invention also provides a method for evaporating the high-dielectric antireflection film and the high-reflective film respectively on the surfaces of the gallium arsenide substrate to reduce the on-resistance of the gallium arsenide photoconductive switch. The lower on-resistance enables the energy loss of a switching device to be reduced when the switching device operates at high power and high frequency, and the operating life and stability of the switch are improved.
Application Domain
Final product manufactureSemiconductor devices
Technology Topic
Energy lossPhotoconductive switch +7
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PUM
Property | Measurement | Unit |
Thickness | 500.0 ~ 700.0 | µm |
Electron mobility | <= 4000.0 | cm2/vs |
Thickness | 200.0 ~ 350.0 | nm |
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