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Photoconductive switch that reduces on-resistance and preparation method thereof

A technology of photoconductive switch and on-resistance, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of not paying attention to the energy utilization of devices, etc., to reduce the on-resistance, improve the working life and stability, and enhance the absorption efficiency Effect

Active Publication Date: 2017-11-21
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The technical solution of this patent document only considers the withstand voltage capability of the device under high voltage, and does not pay attention to the energy utilization of the device in the conduction phase

Method used

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  • Photoconductive switch that reduces on-resistance and preparation method thereof
  • Photoconductive switch that reduces on-resistance and preparation method thereof
  • Photoconductive switch that reduces on-resistance and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0047] A photoconductive switch with reduced on-resistance, with a structure such as figure 1 , 2 As shown, it includes a semi-insulating gallium arsenide substrate 2, an anti-reflection film 1 is provided on one side of the substrate 2, electrodes 3 are provided on both sides of the other side, and a high reflection film 5 is provided between the two electrodes.

[0048] The gallium arsenide substrate has a thickness of 600 μm and a dark state resistivity of 5*10 8 Ωcm, electron mobility 4500cm 2 / vs.

[0049] The anti-reflection coating is an optical anti-reflection coating with a reflectivity of less than 0.5% for a wavelength of 1064nm, and the anti-reflection coating is as follows: the first layer is Al with a thickness of 100-200 angstroms 2 o 3 , the second layer is ZrO with a thickness of 1000-1500 Angstroms 2 , the third layer is Al with a thickness of 800-900 angstroms 2 o 3 .

[0050] The high reflection film is a film layer with a reflectivity greater than ...

Embodiment 2

[0063] Example 2: Photoconductive switch on-resistance test experiment

[0064] The test circuit diagram used in the photoconductive switch on-resistance test experiment is as follows: Figure 5 As shown, R is the current limiting resistor 100MΩ, R load is a high-frequency non-inductive resistor 50Ω, C is an energy storage capacitor 1nF, and PCSS represents a photoconductive switch. Test the voltage value through the high-voltage probe, and test the current value through the current loop.

[0065] The structure made in embodiment 2 is tested on the photoconductive switch described in embodiment 1, and the waveform curves of the input voltage, output voltage and load current of the obtained results are as follows Figure 4 shown.

[0066] The gallium arsenide photoconductive switch with no evaporated anti-reflection film and high reflection film whose other structures are the same as in Example 1 was tested, and the waveform curves of the input voltage, output voltage and lo...

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Abstract

The invention relates to a photoconductive switch that reduces on-resistance and a preparation method thereof. The photoconductive switch comprises a gallium arsenide substrate. An antireflection film is arranged on one surface of the substrate. Electrodes are respectively arranged on two sides of the other surface of the substrate. A high-reflective film is arranged between the two electrodes. The invention also provides a method for evaporating the high-dielectric antireflection film and the high-reflective film respectively on the surfaces of the gallium arsenide substrate to reduce the on-resistance of the gallium arsenide photoconductive switch. The lower on-resistance enables the energy loss of a switching device to be reduced when the switching device operates at high power and high frequency, and the operating life and stability of the switch are improved.

Description

technical field [0001] The invention relates to a photoconductive switch with reduced on-resistance and a preparation method thereof, a method for reducing the on-resistance of the gallium arsenide photoconductive switch by evaporating a high-dielectric anti-reflection film and a high-reflection film on the surface of the gallium arsenide photoconductive switch, It belongs to the field of high frequency and high power. Background technique [0002] Photoconductive switch (PCSS) is an ultrafast switching device that controls the generation and recombination of carriers by light. In the current pulse power technology, the research on various switching components that can withstand high voltage and high current, less electrode burnout, small inductance and resistance, and can work stably under repeated pulses has received high attention. Various short-circuit and circuit-break switches are used, usually they should meet the following characteristics: high repetition frequency,...

Claims

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Application Information

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IPC IPC(8): H01L31/0216H01L31/18H01L31/09
CPCH01L31/0216H01L31/09H01L31/184Y02P70/50
Inventor 徐现刚肖龙飞
Owner SHANDONG UNIV
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