Polyimide/aluminum nitride hybrid membrane for micro-electronic device and preparation method of membrane

Abstract

The invention discloses a polyimide / aluminum nitride hybrid membrane for a micro-electronic device. A preparation method of the membrane comprises steps as follows: firstly, aluminum nitride is subjected to surface oxidation heat treatment, and the hydration resistance of aluminum nitride is improved; a polyamic acid solution is synthesized from tetracarboxydiphthalic ether dianhydride and 3,5-di(4-aminophenoxy) benzoic acid and mixed with a dispersion liquid of aluminum nitride, the mixture is subjected to ball milling and stirring treatment at the room temperature, the surface of aluminum nitride is uniformly coated with the polyamic acid solution, a mixed solution coating is dried, thermal imidization is performed through gradient heating, and the polyimide / aluminum nitride hybrid membrane is obtained. A ball-milling process is adopted for treatment and is remarkably superior to a traditional mechanical stirring method, the aluminum nitride powder is dispersed in a polyimide membrane material more uniformly, the disruptive strength of the membrane is substantially improved, the dielectric constant of polyimide is reduced remarkably, and the requirement that the dielectric constant is below 2.5 in development of the micro-electronic industry is met.

Description

technical field [0001] The invention relates to the field of polyimide materials, in particular to a polyimide / aluminum nitride hybrid film for microelectronic equipment and a preparation method thereof. Background technique [0002] In recent years, with the wide application of high-performance ultra-large-scale integrated circuits, the electrical and electronic industry has gradually developed towards integration, miniaturization, high power and reliability. Higher requirements are put forward, and the corresponding dielectric materials are required to have lower dielectric constants. Polyimide (PI) is widely used in the electronic and electrical industry due to its combination of various excellent properties. However, due to its high intrinsic dielectric constant, PI cannot meet the requirements of modern microelectronic components. Therefore, finding a method for PI thin films with low dielectric constant and excellent thermal and mechanical properties is still a challe...

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Problems solved by technology

[0004] However, the surface of aluminum nitride powder is very active, and it is easy to undergo hydrolysis reaction with water vapor in the air in a humid environment. An aluminum oxide layer is formed on the surface of aluminum nitride powder, and a large amount of oxygen is dissolved in the aluminum nitride lattice, reducing its Thermal conductivity brings great difficulties to the storage, transportation and subsequent process of aluminum nitride