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A kind of manufacturing method of fast recovery diode and fast recovery diode

A technology for recovering diodes and manufacturing methods, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., and can solve problems such as high on-state voltage, increased device voltage drop, and reduced device performance.

Active Publication Date: 2019-12-24
FOUNDER MICROELECTRONICS INT
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The purpose of the embodiments of the present invention is to provide a fast recovery diode manufacturing method and a fast recovery diode, aiming to solve the problem of high on-state voltage and the formation of a fast recovery diode in the prior art when the platinum expansion method is used to increase the reverse recovery speed of the diode. Defects, issues that increase device voltage drop, degrade device performance

Method used

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  • A kind of manufacturing method of fast recovery diode and fast recovery diode
  • A kind of manufacturing method of fast recovery diode and fast recovery diode
  • A kind of manufacturing method of fast recovery diode and fast recovery diode

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Embodiment 1

[0048] Such as Figure 5 As shown, it is a schematic diagram of the manufacturing method of the fast recovery diode provided by Embodiment 1 of the present invention, including:

[0049] Step 101, providing a substrate.

[0050] The substrate may be an N-type substrate, that is, the substrate is formed by adding N-type impurities into the silicon material.

[0051] Step 102, forming an N-type region layer on the surface of the substrate.

[0052] After obtaining the substrate, it is necessary to form an epitaxial region layer on the substrate based on the substrate, that is, form an epitaxial region layer on the upper surface of the substrate, wherein the epitaxial region layer is an N-type region layer. The manufacturing method of the N-type regional layer is also to add N-type impurities into the silicon material.

[0053] It should be noted that the thickness of the N-type region layer is much smaller than the thickness of the substrate, and the N-type region layer here ...

Embodiment 2

[0068] Such as Figure 7 As shown, it is a schematic diagram of the manufacturing method of the fast recovery diode provided by Embodiment 2 of the present invention, including:

[0069] Step 201 , providing a substrate, and forming an N-type region layer on the surface of the substrate.

[0070] Such as Figure 8 As shown, firstly, a substrate is provided, which may be an N-type substrate, wherein the N-type substrate is formed by adding N-type impurities into silicon material. Then an N-type regional layer is formed on the surface of the substrate. The N-type regional layer is also manufactured by adding N-type impurities into the silicon material. And the thickness of the N-type region layer is far smaller than the thickness of the substrate, and the N-type region layer here is equivalent to the base region I in the fast recovery diode.

[0071] Step 202, forming a P-type region layer on the N-type region layer.

[0072] Such as Figure 9 As shown, after obtaining the ...

Embodiment 3

[0090] Embodiment 3 of the present invention provides a fast recovery diode, wherein the fast recovery diode is prepared by the above method. Moreover, the platinum concentration in the substrate region of the fast recovery diode formed in this embodiment is greatly reduced compared with the existing diodes, which can ensure that the platinum in the drift region formed by the N-type region generates defects and reduces the minority carrier recombination time. The platinum concentration in the substrate area is reduced, thereby reducing the reverse recovery time of the device and reducing the forward voltage drop of the device.

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Abstract

The invention provides a fast recovery diode manufacture method and a fast recovery diode. The fast recovery diode manufacture method comprises steps of providing a substrate, forming an N-type area layer on the surface of the substrate, forming a P-type area layer on the N-type area layer, forming a platinum structure on the P-type area layer, forming boron-phosphorosilicate glass for absorbing the platinum on the bottom of the substrate, performing heating processing on the platinum structure formed on the P-type area layer, removing residual platinum on the P-type area layer and the boron-phosphorosilicate glass formed on the bottom of the substrate, forming a first electrode on the P-type area layer after residual platinum is removed and forming a second electrode on the bottom of the substrate where the boron-phosphorosilicate glass is removed. The fast recovery diode manufacture method can absorb the platinum using the boron-phosphorosilicate glass during platinum expansion, reduces the concentration of the platinum in the substrate area, reduces the reverse recovery time of the device and reduces forward voltage drop of the device.

Description

technical field [0001] The invention relates to the technical field of semiconductor chip manufacturing technology, in particular to a method for manufacturing a fast recovery diode and the fast recovery diode. Background technique [0002] Whether the main circuit in the modern power electronic circuit is a thyristor with commutation shutdown, or a new type of power electronic device with self-shutdown capability, such as GTO (Gate Turn-Off Thyristor, which can turn off the thyristor), MOSFET (Metal- Oxide-Semiconductor Field-Effect Transistor, Metal Oxygen Half Field Effect Transistor) and IGBT (Insulated Gate Bipolar Transistor, Insulated Gate Bipolar Transistor), etc., all need a power fast recovery diode connected in parallel to pass through the non-conductive The power current can reduce the charging time of the capacitor of the main switching device, and at the same time suppress the high voltage induced by the parasitic inductance when the load current reverses insta...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/329H01L29/06H01L29/861
CPCH01L29/0684H01L29/6609H01L29/8613
Inventor 李理马万里赵圣哲姜春亮
Owner FOUNDER MICROELECTRONICS INT
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