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Resistive random access memory and manufacturing method thereof

A resistive random, manufacturing method technology, applied in circuits, electrical components, electrical solid devices, etc., can solve problems such as incomplete reset, and achieve the effect of improving durability

Active Publication Date: 2020-01-21
WINBOND ELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the oxygen ions have diffused outward in the titanium layer, there will be a problem of not being able to completely reset

Method used

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  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof
  • Resistive random access memory and manufacturing method thereof

Examples

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Embodiment Construction

[0050] In order that the concept of the invention may be more fully appreciated, reference is made herein to the accompanying drawings, in which embodiments of the invention are shown. However, the invention may also be practiced in many different forms and should not be construed as limited to the embodiments set forth below. Rather, the embodiments are provided only so that the present invention will be thorough and complete, and will fully convey the scope of the present invention to those skilled in the art.

[0051] In the drawings, the sizes and relative sizes of layers and regions may be exaggerated for clarity.

[0052] figure 1 It is a cross-sectional view of the resistive random access memory according to the first embodiment of the present invention.

[0053] Please refer to figure 1 , the resistive random access memory includes a lower electrode 102 , an upper electrode 104 , a variable resistance layer 106 , an oxygen storage layer 108 and a reactive oxygen bar...

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Abstract

The invention provides a resistive random access memory and a manufacturing method thereof. A resistive random access memory including a lower electrode, an upper electrode, a variable resistance layer, an oxygen storage layer, and a reactive oxygen barrier layer. The lower electrode is disposed on the base. The upper electrode is disposed on the lower electrode. The variable resistance layer is disposed between the lower electrode and the upper electrode. The oxygen storage layer is disposed between the variable resistance layer and the upper electrode. The reactive oxygen barrier layer is disposed in the oxygen storage layer. The invention can improve the reset characteristic and durability of the memory element by setting the reactive oxygen barrier layer, and can increase the yield and stability of the memory element.

Description

technical field [0001] The invention relates to a non-volatile memory, in particular to a resistive random access memory and a manufacturing method thereof. Background technique [0002] Resistive random access memory (RRAM) is a type of non-volatile memory. Because resistive random access memory has the advantages of low write operation voltage, short write and erase time, long memory time, non-destructive read, multi-state memory, simple structure and small required area, it will be available in the future It has become one of the non-volatile memory components widely used in personal computers and electronic equipment, so it is currently being extensively studied. [0003] In general, RRAM includes a metal-insulator-metal (MIM) structure composed of upper electrodes, lower electrodes and a resistance changeable layer interposed therebetween. [0004] When a positive bias is applied to the variable resistance layer, oxygen ions are attracted by the positive bias to leave...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/24H01L45/00
CPCH10B63/00H10N70/20H10N70/801H10N70/011
Inventor 陈达
Owner WINBOND ELECTRONICS CORP
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