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Multilayer structure copper-zinc-sulfur (CZTS) film solar energy battery back electrode and preparation method for the same

A technology of solar cells and copper-zinc-tin-sulfur, which is applied in the field of solar cells, can solve the problems of increasing short-circuit current, poor conductivity, and insignificant improvement of the performance of CZTS thin-film solar cells, and achieves the effect of inhibiting reaction and improving stability.

Inactive Publication Date: 2017-12-08
HUBEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method has the following problems: the barrier layer generally uses inert ceramic materials with poor conductivity such as: TiN, TiB 2 etc., although this type of material can block the reaction between CZTS and Mo, but due to TiN, TiB 2 The poor conductivity of the Mo substrate limits the charge collection process of the Mo substrate (Chemistry of Materials, 2013, Vol. 25, pp. 3162-3171; APPLIED PHYSICS LETTERS, 2014, Vol. 105, pp. 051105-1-5) ;Secondly, TiN, TiB 2 The addition of this type of barrier layer inhibits the MoS on the Mo substrate surface 2 generation, while the thinner MoS 2 Contribute to the formation of ohmic contact between the CZTS light absorbing layer material and the back substrate, and promote the transfer of charges in CZTS to the substrate
Based on the above reasons, at present, inserting an inert ceramic material with poor conductivity between Mo and CZTS thin film will increase the series resistance of CZTS thin film solar cells, increase the short-circuit current, and the performance improvement of CZTS thin film solar cells is not obvious.

Method used

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  • Multilayer structure copper-zinc-sulfur (CZTS) film solar energy battery back electrode and preparation method for the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1μm Mo / 10nm Au / 10nm MoS 2 Preparation of structured back electrodes:

[0026] 1. Place the 1 μm Mo base glass on the chamber substrate for magnetron sputtering deposition, vacuumize to 0.3Pa, turn on the power supply I of the sputtering inert metal Au source, set the sputtering power to 100W, and after glow discharge, Open baffle, start sputtering, close power supply 1 and baffle after sputtering time 10s, finish the deposition of 10nm Au inert metal layer;

[0027] 2. After the deposition of the 10nm Au inert metal layer is completed, clean the chamber with Ar gas, evacuate to 0.1Pa again, turn on the power supply II for sputtering Mo, set the sputtering power to 180W, and turn off the power supply II and the shield after 10s of sputtering time. plate, complete the deposition of 10nm Mo layer;

[0028] 3. Put the composite substrate deposited with a certain thickness of Au and Mo in a vulcanization tube, heat up to 600°C at a rate of 50°C / s, control the pressure of t...

Embodiment 2

[0033] 1.5μm Mo / 50nm Pt / 50nm MoS 2 Preparation of structured back electrodes:

[0034] 1. Place the 1.5 μm Mo substrate glass on the cavity substrate for magnetron sputtering deposition, evacuate to 0.1Pa, turn on the power supply I of the sputtering inert metal Pt source, set the sputtering power to 150W, and after glow discharge , open the baffle, start sputtering, close the power supply 1 and the baffle after the sputtering time 20s, and finish the deposition of the 50nm Pt inert metal layer.

[0035] 2. After completing the deposition of the 50nm Pt inert metal layer, use Ar gas to clean the chamber, evacuate to 2Pa again, turn on the power supply II for sputtering Mo, set the sputtering power to 30W, and turn off the power supply II and the baffle after the sputtering time is 100s , to complete the deposition of a 50nm Mo layer.

[0036] 3. Place the composite substrate deposited with a certain thickness of Pt and Mo in a vulcanization tube, raise the temperature to 300...

Embodiment 3

[0041] 2μm Mo / 500nm Pd / 25nm MoS 2 Preparation of structured back electrodes:

[0042] 1. Place the 2 μm Mo substrate glass on the cavity substrate for magnetron sputtering deposition, evacuate to 5Pa, turn on the power supply I of the sputtering inert metal Pd source, set the sputtering power to 50W, and after glow discharge, turn on Baffle plate, start sputtering, close power source I and baffle plate after sputtering time 120s, finish the deposition of 500nm Pd inert metal layer;

[0043] 2. After completing the deposition of the 500nm Pd inert metal layer, clean the cavity with Ar gas, evacuate to 5Pa again, turn on the power supply II for sputtering Mo, set the sputtering power to 35W, and turn off the power supply II and the baffle after the sputtering time is 40s , complete the deposition of 25nm Mo layer;

[0044] 3. Put the composite substrate deposited with a certain thickness of Pd and Mo in a vulcanization tube, raise the temperature to 250°C at a rate of 100°C / s,...

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Abstract

The invention discloses a multilayer structure copper-zinc-sulfur (CZTS) film solar energy battery back electrode and a preparation method for the same. The multilayer structure is : a Mo substrate (1-2mun) / inertia metal layer (10-500nm) / MoS2 layer (10-50nm). The preparation method for the multilayer structure CZTS film solar energy battery back electrode comprises steps of preparing an inertia metal layer on the surface of the Mo substrate, depositing an Mo layer to form an MoS2 layer after sulfuration and forming a back electrode of a Mo substrate / an iteration metal layer / an MoS2 layer multilayer structure. The multilayer structure copper-zinc-sulfur (CZTS) film solar energy battery back electrode is applied to the CZTS film solar battery, can effectively prevent a reaction between the CATS and the Mo, improves stability of the CZTS film solar battery and an adhesive force between the substrate and a subsequent upper layer structure, realizes accurate control of the thickness of the MoS2 layer, guarantees good ohm contact between the CZTS and the back electrode, improves charge collection capability of the back electrode and improves performance of the CZTS film solar battery.

Description

technical field [0001] The invention belongs to the field of solar cells, and in particular relates to a back electrode of a copper-zinc-tin-sulfur thin-film solar cell with a multilayer structure and a preparation method thereof. Background technique [0002] Copper-zinc-tin-sulfur (CZTS) thin-film solar cell is a new type of solar cell. Compared with silicon crystal and silicon thin-film solar cells, it is very suitable for large Large-scale, low-cost development and utilization, it is a very competitive inorganic compound thin-film solar cell. The conventional device structure of CZTS thin-film solar cells is as follows: Mo / CZTS / CdS / i~ZnO / ITO / Ni~Al. The device efficiency of CZTS thin-film solar cells based on this structure has exceeded 10%, reaching 12.7%, which is CZTS Based on the highest efficiency of thin-film solar cells so far. [0003] Recent studies have shown that there are major structural defects in CZTS thin film solar cells, which limit the further improve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/072
CPCY02E10/50H01L31/022425H01L31/072
Inventor 童正夫刘志锋韩长存
Owner HUBEI UNIV OF TECH