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31results about How to "Decrease is limited" patented technology

Non-aqueous electrolyte for secondary battery and non-aqueous electrolyte secondary battery

The present invention provides a non-aqueous electrolyte secondary battery comprising a positive electrode, a negative electrode, a separator, and a non-aqueous electrolyte, wherein the non-aqueous electrolyte comprises a non-aqueous solvent and lithium salt as an electrolyte, and wherein the non-aqueous solvent contains chain fluorinated carboxylic acid ester represented by the formula CH3COOCH2CH3-xFx (wherein x is 2 or 3) and a film forming chemical decomposed in the range of +1.0 to 3.0 V based on an equilibrium potential between metal lithium and lithium ion.
Owner:SANYO ELECTRIC CO LTD +1

Image displaying apparatus, image display observing system and image displaying method

An image displaying apparatus includes a signal control unit for receiving an input image signal and converting the signal into a signal for alternately displaying a right-eye image and a left-eye image, display panel into which the signal converted in the signal control unit is input for the right-eye image and the left-eye image, a surface light source for illuminating the display panel from its back, a shutter control unit for generating a timing signal indicating a period in which the right-eye and left-eye shutters are opened for a pair of viewing glasses with the right-eye and left-eye shutters, and for relatively changing the shutter-opened period for the emission timing of the surface light source, and a surface light source control unit for emitting the surface light source in a shorter period than the shutter-opened period in response to the switching between the right-eye image and the left-eye image.
Owner:SATURN LICENSING LLC

Plasma processing apparatus

A plasma processing apparatus capable of, over a prolonged period of time, controlling a decrease in the value of a DC current flowing within an accommodating compartment. The plasma processing apparatus comprises an accommodating compartment adapted to accommodate a substrate and perform a plasma treatment thereon, a high-frequency power source adapted to supply high-frequency power to the inside of the accommodating compartment; a DC electrode adapted to apply a DC voltage to the inside of the accommodating compartment, a ground electrode provided within the accommodating compartment and used for the applied DC voltage, and an exhaust unit adapted to evacuate the inside of the accommodating compartment. The plasma processing apparatus further comprises a shielding member disposed in the accommodating compartment so as to extend along the flow of exhaust gas, interpose between the flow of exhaust gas and the ground electrode, and form a cross-sectionally elongated groove-shaped space between the shielding member and the ground electrode.
Owner:TOKYO ELECTRON LTD

Insulated gate bipolar transistor

ActiveUS20100244091A1Enhancing hole accumulation effectLow densitySemiconductor devicesEngineeringTransistor
In some embodiments, an insulated gate bipolar transistor includes a drift layer, insulation gates formed at a principle surface portion of the drift layer, base regions formed in a between-gate region, an emitter region formed in the base region so as to be adjacent to the insulation gate, an emitter electrode connected to the emitter region, a collector layer formed at the other side of the principle surface portion of the drift layer, and a collector electrode connected to the collector layer. The conductive type base regions are separated with each other by the drift layers, and the drift layer and the emitter electrode are insulated by an interlayer insulation film.
Owner:SEMICON COMPONENTS IND LLC

Adaptive power source control system

A method of controlling a power source associated with a machine includes determining a difference between an underspeed setpoint associated with a peak power source torque and a first power source speed. The method also includes determining a torque distribution associated with the power source and at least one parasitic load receiving power from the power source. The torque distribution is based on the difference and respective torque priority values associated with the power source and the at least one parasitic load. The method further includes providing torque from the power source to the at least one parasitic load based on the torque distribution and modifying at least one of the respective torque priority values. Modifying at least one of the torque priority values reduces a difference between the underspeed set point and a second power source speed different than the first power source speed.
Owner:CATERPILLAR INC

Impeller for fuel pump and fuel pump in which the impeller is employed

An impeller is employed for a fuel pump and boosts a pressure of fuel by rotating the fuel in a pump passage formed in the fuel pump in a rotational direction of the impeller. The impeller includes a plurality of vane grooves formed adjacent to each other in the rotational direction of the impeller and a plurality of vanes formed adjacent to each other in the rotational direction. Each one of the plurality of vanes divides one of adjacent two of the plurality of vane grooves from the other. A difference between a maximal value and a minimum value of an adjacent vane angle is set in a range of 2.5° to 4°. A fuel pump includes a motor unit, the impeller, and a casing member. The impeller is rotated by rotation driving force of the motor unit. The casing member rotatably receives the impeller and defines the pump passage.
Owner:DENSO CORP

Compound semiconductor device and method for manufacturing the same

A method for manufacturing a compound semiconductor device includes: providing a semiconductor substrate including a foundation layer having a first conductivity type; forming a deep trench in the foundation layer; and forming a deep layer having a second conductivity type by introducing material gas of the compound semiconductor while introducing dopant gas into an epitaxial growth equipment to cause epitaxial growth of the deep layer in the deep trench. A period in which a temperature in the epitaxial growth equipment is increased to a temperature of the epitaxial growth of the deep layer is defined as a temperature increasing period. In the forming the deep layer, the deep layer is further formed in a bottom corner portion of the deep trench by starting the introducing of the dopant gas during the temperature increasing period and starting the introducing of the material gas after the temperature increasing period.
Owner:DENSO CORP

Method of driving display device and method of producing display device

A method of driving a display device including a display panel that includes a color filter board is provided. The color filter board includes a light blocking section formed in a grid and color sections that are formed in areas surrounded by a pattern of the light blocking section in different colors from area to area. The color sections form display pixels on a combination basis. The display panel includes a light blocking area in at least a section of an edge along an outline of the display pane. The method includes setting the color sections that do not form the display pixels among the color sections adjacent to the light blocking area in a plan view of the display panel constantly in the black state.
Owner:SHARP KK

Semiconductor device and method for manufacturing the same

In order to provide a semiconductor device having good quality by keeping the relative permittivity of a High-K insulation film in a high state, or to provide a method for manufacturing a semiconductor device in which the relative permittivity of the High-K insulation film can be kept in a high state, a semiconductor device is disclosed that includes a silicon substrate, a gate electrode layer, and a gate insulation film between the silicon substrate and the gate electrode layer. The gate insulation film is a high relative permittivity (high-k) film being formed by performing a nitriding treatment on a mixture of a metal and silicon. The High-K film itself becomes a nitride so as to prevent SiO2 from being formed.
Owner:OHMI +1

In-cylinder injection type spark-ignition internal combustion engine and method

In an in-cylinder injection spark-ignition internal combustion engine including a plurality of cylinders and a catalyst device disposed in an exhaust system of the engine, a fuel is injected to at least one selected cylinder selected from the plurality of cylinders to be operated, and subsequently the fuel is injected to all cylinders to be operated. At this time, a warm-up controlled variable for the at least one selected cylinder is smaller than the warm-up controlled variable used when all cylinders are operated. In the in-cylinder injection spark-ignition internal combustion engine, the all cylinder operation is started and the warm-up control is started for all cylinders to warm up the catalyst device disposed in the exhaust system of the engine preferably when a fuel injection pressure exceeds a target value.
Owner:TOYOTA JIDOSHA KK

Outer stator of reciprocating engine and reciprocating engine

An outer stator is provided in a reciprocating engine together with an inner stator and a mover, that has a cylindrical shape and is placed around the mover coaxially with an axis of the mover, and that forms a magnetic path between itself and the inner stator via a field magnet of the mover, the outer stator includes an aperture portion that is formed in an inner circumferential surface thereof that faces the mover; an internal space that opens via the aperture portion, and in which a wound wire coil is placed; and undercut portions that, in a cross section including the axis, are provided at both end positions along the axis, and that are recessed from the inner circumferential surface towards the outer side in a radial direction.
Owner:DIAMET CORP

Method for controlling polyphase rotating electrical machine

A method for controlling a reversible polyphase rotating electrical machine, wherein at least one coil circuit is supplied through a bridge of switches, including the following steps: controlling (P1) the bridge to deliver to the coil circuit a periodic voltage with a phase shift (d) relative to an electromotive force induced in the coil circuit, such that an operating torque is generated, the phase shift having initially a first value (d0); controlling (P2) the bridge to deliver to the coil circuit a periodic voltage with the phase shift (d) producing a torque ranging between the operating torque and the opposite of the operating torque, the phase shift taking on a plurality of values upon the control; flipping (T2) the bridge in rectifying mode.
Owner:VALEO EQUIP ELECTRIC MOTEUR

Field-effect type semiconductor device for power amplifier

In a semiconductor multi-layer structure in which a first SiGe layer having a first conductivity-type and high impurity concentration, a second SiGe layer having the first conductivity-type and a low impurity concentration and a Si layer having a low impurity concentration are formed one on another in this order on a Si substrate of the first conductivity-type, a channel is formed in a part of the Si layer and a source electrode passes through the second SiGe layer of low impurity concentration to electrically contact the first SiGe layer of high impurity concentration or the substrate.
Owner:TESSERA ADVANCED TECH
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