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High-power narrow-linewidth C-band erbium-doped optical fiber amplifier employing 1064 pumping source

An erbium-doped fiber, high-power technology, applied in the direction of lasers, laser components, phonon exciters, etc., can solve the problems of complex drive and control circuits, low electro-optical efficiency, and high power consumption, and achieve the structure of drive and control circuits Simplicity, high light conversion efficiency, and large output power

Pending Publication Date: 2017-12-08
珠海光恒科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] An important issue in erbium-doped fiber amplifier is to select a suitable pump source. At present, the conventional erbium-doped fiber amplifier uses a 980nm single-mode pump laser as the pump source. The pumping wavelength of erbium-doped fiber is 980nm, and its pump-signal The conversion efficiency is low, only 30%, and the pump power required to achieve 1W signal output is very large
In addition, the 980nm single-mode pump laser has low electro-optic efficiency, high cost, and high requirements on the stability of the die temperature, which requires refrigeration and temperature control, high power consumption, and complex drive and control circuits.
The temperature deviation has a great influence on the pump output wavelength, which in turn affects the optical index of the amplifier

Method used

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  • High-power narrow-linewidth C-band erbium-doped optical fiber amplifier employing 1064 pumping source

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Embodiment Construction

[0018] see figure 1 , figure 1 It is a schematic diagram of the structure of the 1064-pumped high-power narrow-linewidth C-band erbium-doped fiber amplifier of this embodiment. The 1064 pump high-power narrow-linewidth C-band erbium-doped fiber amplifier of the present embodiment comprises signal source, 1064 pump source, erbium-doped fiber and coupling system; The signal light that described signal source sends and 1064 pump source send The 1064nm pump light is coupled to the erbium-doped fiber through the coupling system, and the signal light is amplified and output.

[0019] Specifically, the signal source includes an optical input port 11 and a first optical isolator 12; the 1064 pump source includes a 940nm multimode pump laser 21, a beam combiner 22, a first grating 231, an ytterbium-doped optical fiber 24 and The second grating 232; the erbium-doped fiber comprises the first erbium-doped fiber 31 and the second erbium-doped fiber 32; the coupling system comprises a co...

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Abstract

The invention relate to a high-power narrow-linewidth C-band erbium-doped optical fiber amplifier employing a 1064 pumping source. The amplifier includes a signal source, the 1064 pumping source, an Er-doped fiber and a coupling system. Signal light sent by the signal source and pumping light sent by the 1064 pumping source are coupled to the Er-doped fiber through the coupling system and the signal light is amplified and then output. According to the invention, 1064 nm pumping light is adopted for pumping of the Er-doped fiber, so that the light conversion efficiency is high, the power consumption is low, and a drive and a control circuit are simple.

Description

technical field [0001] The invention relates to the technical field of optical fiber amplifiers, in particular to a 1064-pumped high-power narrow-linewidth C-band erbium-doped optical fiber amplifier. Background technique [0002] Optical fiber amplifiers are generally composed of a signal source, a pump source, a gain medium fiber, an optical isolator and a coupling system. Signal light and pump light are coupled in the gain medium fiber to obtain amplified signal light output. The gain medium fiber in the erbium-doped fiber amplifier is erbium-doped fiber, and its amplification principle is: when there is no pump light, the energy state of erbium ions is called the ground state; after absorbing the pump light energy, the erbium ions are in a higher energy state , that is, the transition from the ground state to the excited state; because the lifetime of the erbium ion in this high-energy excited state is very short, it will quickly transition to a lower excited state, whic...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S3/067H01S3/094
CPCH01S3/06754H01S3/094042
Inventor 郭东霞段誉
Owner 珠海光恒科技有限公司