High-corrosion-resistance silicon carbide ceramic connecting material, and connecting method for silicon carbide ceramic

A technology of silicon carbide ceramics and high corrosion resistance, which is applied in the field of connecting silicon carbide ceramic materials by using the connection material, which can solve the problems that the connection position is easy to be corroded, achieve high connection temperature, reduce the thickness of titanium film, and avoid corrosion-prone phases. Effect

Inactive Publication Date: 2017-12-19
NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These connection methods all realize the connection of SiC, but the problem that the connection position is easily corroded when the silicon carbide ceramic material is in a corrosive working environment has not been discussed in depth.
So far, there are few research reports on improving the corrosion resistance of the connection position of the silicon carbide ceramic material.

Method used

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  • High-corrosion-resistance silicon carbide ceramic connecting material, and connecting method for silicon carbide ceramic
  • High-corrosion-resistance silicon carbide ceramic connecting material, and connecting method for silicon carbide ceramic
  • High-corrosion-resistance silicon carbide ceramic connecting material, and connecting method for silicon carbide ceramic

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] In this example, if figure 1 The silicon carbide ceramic materials to be joined are shown as being joined using the joining layer material. The material to be connected is two pieces of Ф20*20mm silicon carbide, the roughness of the connection surface is 0.1μm, and the material of the connection layer is a pure titanium film with a thickness of 1μm. The connection interface is heated by an external heat source to make the connection interface reach the connection temperature, so that the The SiC materials to be joined are joined together. The method of external heat source heating connection is electric field assisted thermocompression connection. Specific steps are as follows:

[0029] (1) Polish the silicon carbide surface to be connected with 0.1 micron diamond polishing liquid to remove larger defects and impurities on the surface;

[0030] (2) Coating a 1 μm Ti film on the surface of a piece of silicon carbide to be connected by PVD method, and then docking anot...

Embodiment 2

[0034] In this example, if figure 1 The silicon carbide ceramic materials to be joined are shown as being joined using the joining layer material. The material to be connected is exactly the same as that in Example 1. Same as in Example 1, the material of the connection layer is a pure titanium film with a thickness of 1 μm, except that the connection temperature in this embodiment is 1000° C. Same as Example 1, the connection interface is heated by an external heat source to bring the connection interface to the connection temperature, thereby connecting the SiC materials to be connected together, and the method of heating the connection by the external heat source is electric field assisted thermocompression connection. Specific steps are as follows:

[0035] (1) Polish the silicon carbide surface to be connected with 0.1 micron diamond polishing liquid to remove larger defects and impurities on the surface;

[0036] (2) Coating a 1 μm Ti film on the surface of a piece of...

Embodiment 3

[0040] In this example, if figure 1 The silicon carbide ceramic materials to be joined are shown as being joined using the joining layer material. The material to be connected is exactly the same as that in Example 1, except that the material of the connection layer in this experiment is a pure titanium film with a thickness of 500 nm. Same as in Example 1, the connection interface is heated by an external heat source to reach the connection temperature. The connection temperature is 1300° C., so that the SiC materials to be connected are connected together. The method of heating the connection by the external heat source is electric field assisted thermocompression connection. Specific steps are as follows:

[0041] (1) Polish the silicon carbide surface to be connected with 0.1 micron diamond polishing liquid to remove larger defects and impurities on the surface;

[0042] (2) Coating a 500nm Ti film on the surface of a piece of silicon carbide to be connected by PVD metho...

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Abstract

The invention provides a high-corrosion-resistance silicon carbide ceramic connecting material. The connecting material is a titanium membrane with a thickness of less than 1 [mu]m. The connecting material is clamped between to-be-connected silicon carbide ceramic materials, and the to-be-connected silicon carbide ceramic materials are connected together by heating a connection interface to a connection temperature of more than 1000 DEG C via an external heat source; and the connection position of the connected silicon carbide ceramic materials has high corrosion resistance.

Description

technical field [0001] The invention relates to the technical field of silicon carbide ceramic materials, in particular to a connecting material for silicon carbide ceramics, which has the advantages of high corrosion resistance and high bending strength, and also relates to a method for connecting silicon carbide ceramic materials using the connecting material. Background technique [0002] Silicon carbide ceramics (SiC) have a series of advantages such as low neutron activity, strong resistance to neutron radiation, low density, high temperature resistance, oxidation resistance, and wear resistance, and are one of the preferred materials for the new generation of nuclear fuel cladding materials. However, the inherent brittleness and indeformability of ceramic materials and the processing and repair of parts make it very difficult to produce silicon carbide ceramic materials with complex shapes. Therefore, in actual manufacturing, connection technology is usually required to...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C04B37/00
CPCC04B37/003C04B2237/122C04B2237/365C04B2237/52C04B2237/595
Inventor 黄庆杨辉周小兵黄峰都时禹
Owner NINGBO INST OF MATERIALS TECH & ENG CHINESE ACADEMY OF SCI
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