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Welding method of tantalum target module

A welding method and tantalum target technology, which can be used in welding equipment, welding/welding/cutting items, non-electric welding equipment, etc., and can solve problems such as inability to achieve

Inactive Publication Date: 2017-12-26
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the welding method of the tantalum target assembly in the prior art cannot achieve: while improving the welding strength of the tantalum target and the copper back plate, the copper back plate can be reused

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  • Welding method of tantalum target module
  • Welding method of tantalum target module
  • Welding method of tantalum target module

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Embodiment Construction

[0030] As mentioned in the background art, the welding method of the tantalum target assembly in the prior art cannot achieve: while improving the welding strength between the tantalum target and the copper back plate, the copper back plate can be reused.

[0031] A welding method for a tantalum target component includes: providing a tantalum target and a copper back plate; welding the tantalum target and the copper back plate by a hot isostatic pressing process, thereby forming a tantalum target component.

[0032] However, in the above method, the tantalum target and the copper back plate are welded together by a hot isostatic pressing process. In the hot isostatic pressing process, the atoms between the tantalum target and the copper backplane are diffused and bonded together, so that the bonding strength between the tantalum target and the copper backplane is relatively high. However, since a large number of atoms of the tantalum target material enter the copper backplane,...

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Abstract

The invention discloses a welding method of a tantalum target module. The welding method of the tantalum target module comprises the following steps: the tantalum target and a copper back plate are provided; the tantalum target is provided with a first welding surface; the copper back plate is provided with a second welding surface; a bonding layer is formed on the first welding surface; the melting point of the bonding layer is lower than the melting point of the tantalum target; a molten first solder layer is formed on the surface of the bonding layer; the melting point of the bonding layer is higher than the melting point of the first solder layer; a molten second solder layer is formed on the second welding surface; the melting point of the bonding layer is higher than the melting pint of the second solder layer; the tantalum target and the copper back plate are pressed; the first solder layer and the second solder layer are contacted; and the tantalum target and the copper back plate are pressed for cooling. As the bonding layer is formed on the first welding surface, and the melting point of the bonding layer is lower than the melting point of the tantalum target and higher than the melting points of the first solder layer and the second solder layer, the welding strength of the cooled tantalum target with the first solder layer and the second solder layer is improved, the welding strength of the tantalum target and the copper back plate is improved, and the copper back plate can be recycled.

Description

technical field [0001] The invention relates to the field of manufacturing semiconductor sputtering targets, in particular to a welding method for tantalum target components. Background technique [0002] In the semiconductor industry, a target assembly needs to meet the sputtering performance, and the target assembly includes a target and a back plate combined with the target and having a certain bonding strength. The back plate plays a supporting role when the target assembly is assembled to the sputtering base station, and has the effect of conducting heat. [0003] Among them, the tantalum target component is an important target component. The tantalum target assembly includes a tantalum target and a copper backplate. [0004] In the magnetron sputtering coating process, the target component is in a high-voltage electric field and a magnetic field with a strong magnetic field. The target is sputtered under the action of high-energy ion bombardment, and the neutral atom...

Claims

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Application Information

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IPC IPC(8): B23K31/02B23K20/10C23C14/34
CPCB23K20/10B23K31/02B23K2103/18C23C14/3414
Inventor 姚力军潘杰相原俊夫王学泽段高林
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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