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A cmos image sensor and its preparation method and electronic device

An image sensor and MOS transistor technology, applied in the field of CMOS image sensor and its preparation, can solve the problems of short exposure time and so on

Active Publication Date: 2020-05-22
SEMICON MFG INT (BEIJING) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are two main problems in the design of high-speed CIS pixels: First, because the exposure time is very short, in order to increase the sensitivity, a large pixel full well capacity (FullWell Capacity, FWC) is required
In order to increase and improve imaging hysteresis and obtain higher FD voltage, higher pixel full well capacity (FullWell Capacity, FWC) and lower depletion voltage Vpin are required, but in reality, pixel full well capacity (FullWell Capacity, FWC) It increases proportionally to the depletion voltage Vpin, thus forming a contradiction

Method used

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  • A cmos image sensor and its preparation method and electronic device
  • A cmos image sensor and its preparation method and electronic device
  • A cmos image sensor and its preparation method and electronic device

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preparation example Construction

[0052] The application also provides a method for preparing a CMOS image sensor, the method comprising:

[0053] providing a semiconductor substrate having doping of a first conductivity type;

[0054] forming a diode region doped with a second conductivity type in the semiconductor substrate;

[0055] performing a first ion implantation step to form a first ion implantation layer on the surface of the semiconductor substrate to cover the diode region, wherein the first ion implantation includes implantation of ions of the first conductivity type and implantation of ions of the second conductivity type Ion implantation.

[0056] Wherein, the implantation energy of the first conductivity type ions in the first ion implantation layer is 10-30Kev, and the implantation dose is 2.5E13-3.5E13 atoms / cm 3 .

[0057] Wherein, the implantation energy of the second conductivity type ions in the first ion implantation layer is 40-60Kev, and the implantation dose is 1.5E12-2.5E12 atoms / ...

Embodiment 1

[0064] Below, refer to figure 1 as well as figure 2 The detailed steps of an exemplary method of the manufacturing method of the CMOS image sensor proposed in the embodiment of the present invention will be described. in, figure 1 It is a schematic flowchart of a method for preparing a CMOS image sensor according to an embodiment of the present invention, specifically including:

[0065] Step S1: providing a semiconductor substrate, the semiconductor substrate is doped with a first conductivity type;

[0066] Step S2: forming a diode region doped with a second conductivity type in the semiconductor substrate;

[0067] Step S3: performing a first ion implantation step to form a first ion implantation layer on the surface of the semiconductor substrate to cover the diode region, wherein the first ion implantation includes first conductivity type ion implantation and second Conductive type ion implantation.

[0068] The preparation method of the CMOS image sensor of the pre...

Embodiment 2

[0123] An embodiment of the present invention provides a CMOS image sensor, which is prepared by the preparation method in the first embodiment above.

[0124] Below, refer to figure 2 A structure of a CMOS image sensor proposed by an embodiment of the present invention will be described. in, figure 2 It is a cross-sectional view of the structure of the CMOS image sensor of the embodiment of the present invention.

[0125] Wherein, the image sensor includes:

[0126] a semiconductor substrate 201, the semiconductor substrate has a first conductivity type doping;

[0127] a diode region 203, the diode region is doped with a second conductivity type and is located in the semiconductor substrate;

[0128] A first ion implantation layer, the first ion implantation layer is located on the surface of the semiconductor substrate and covers the diode region, and the first ion implantation layer is implanted with ions of the first conductivity type and ions of the second conducti...

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Abstract

The present invention relates to a CMOS image sensor and a preparation method thereof, and an electronic device. The image sensor comprises: a semiconductor substrate comprising a first conductive type doping; a diode area located in the semiconductor substrate and having a second conductive type doping; and a first ion implanted layer located at the surface of the semiconductor substrate and configured to cover the diode area, wherein the first conductive type doping and the second conductive type doping are inserted into the first ion implanted layer. An exhaust voltage Vpin of the CMOS image sensor can be substantially reduced through changing while pixel fullwell capacity (FWC) cannot be reduced, a contradiction of direct proportion increasing of the pixel fullwell capacity (FWC) and the exhaust voltage Vpin is solved, the electron mobility of the CMOS image sensor is substantially improved, an image tail phenomenon is effectively improved, and sensitivity of the CMOS image sensoris improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a CMOS image sensor, a preparation method thereof, and an electronic device. Background technique [0002] In the field of semiconductor technology, an image sensor is a CMOS image sensor that converts an optical image into an electrical signal. Image sensors can be roughly classified into Charge Coupled Devices (CCD) and Complementary Metal Oxide Semiconductor Image Sensors (CMOS Image Sensor, CIS). The advantage of the CCD image sensor is that it has high image sensitivity and low noise, but it is difficult to integrate the CCD image sensor with other devices, and the power consumption of the CCD image sensor is relatively high. [0003] In contrast, CMOS image sensors have gradually replaced CCDs due to their advantages such as simple process, easy integration with other devices, small size, light weight, low power consumption, and low cost. At present, CMOS image sen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01L27/146
Inventor 郑大燮陈德艳施雪捷
Owner SEMICON MFG INT (BEIJING) CORP