Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of polymer semiconductor containing bispyridinediazole derivative acceptor and its preparation method and application

A pyridinediazole and polymer technology is applied in the field of polymer semiconductors containing bispyridinediazole derivative acceptors and their preparation, and achieves the effects of low development cost, high electron mobility, short and efficient synthesis route

Active Publication Date: 2019-12-27
XIANGTAN UNIV
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, electron-transporting pyridinediazole derivative-based polymer semiconductor materials have not been reported

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of polymer semiconductor containing bispyridinediazole derivative acceptor and its preparation method and application
  • A kind of polymer semiconductor containing bispyridinediazole derivative acceptor and its preparation method and application
  • A kind of polymer semiconductor containing bispyridinediazole derivative acceptor and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

specific Embodiment 1

[0057] A polymer semiconductor containing a bispyridinediazole derivative acceptor of the present invention, specifically a polymer semiconductor material with a chemical structure of PBPTV, its synthetic route is as follows:

[0058]

[0059] (1) Synthesis of an intermediate whose chemical structural formula is a: under nitrogen protection, tributyl-[4-(2-decyltetradecyl)thiophen-2-yl]alkyltin (5.8g , 8.2mmol), 4,7-dibromo-[1,2,5]thiadiazolo[3,4-c]pyridine (2.0g, 6.8mmol), bis(triphenylphosphine)palladium dichloride (0.24g, 0.34mmol) catalyst, 70mL toluene solvent. After reflux for 4 hours, cool to room temperature. Using dichloromethane for extraction, the organic phase was dried with magnesium sulfate, and the solvent was spin-dried to obtain a crude product. Then use silica gel column purification to obtain the target product 7-bromo-4-(4-(2-decyltetradecyl)thiophen-2-yl)-[1,2,5]thiazole[3,4-c] Pyridine, yield = 85%.

[0060] The structural characterization data are...

specific Embodiment 2

[0077] A polymer semiconductor containing a bispyridinediazole derivative acceptor of the present invention, specifically a polymer semiconductor material with a chemical structure of PBPT2V, its synthetic route is as follows:

[0078]

[0079] (1) Synthesis of an intermediate whose chemical structural formula is a: Synthesize with reference to the synthetic method of the above-mentioned Example 1.

[0080] (2) Synthesis of an intermediate whose chemical structural formula is c: under nitrogen protection, add compound b[(E)-1,2-bis(tributyltin-based)ethylene] (0.56g, 0.92mmol) and compound a (1.75g, 2.76mmol), tetrakis(triphenylphosphine) palladium catalyst (0.053g, 0.046mmol) and toluene solvent. After reflux for 24 hours, cool to room temperature. Extract with dichloromethane, dry the organic phase with anhydrous magnesium sulfate, and spin the solvent to obtain a crude product. The target product (E)-1,2-bis(4-4-(2-decyltetradecyl)thiophen-2-yl)-[1,2,5]thiazo[3, 4-c]p...

Embodiment 1 and 2

[0093] The measurement of the spectroscopic property of gained polymer PBPTV and PBPT2V and thin film field effect transistor property prepared by above-mentioned embodiment 1 and 2:

[0094] (1) Absorption spectral properties of polymers PBPTV and PBPT2V

[0095] figure 1 UV-visible-near-infrared absorption spectra of polymer PBPTV in chlorobenzene solution and thin film on quartz plate. Depend on figure 1 It can be seen that both the polymer PBPTV solution and the film exhibit a wide absorption range, and the maximum absorption sideband value of the film is about 865nm, and the corresponding optical band gap is 1.43eV (the optical band gap is calculated according to the formula E g =1240 / λ calculation, where E g is the optical bandgap, and λ is the maximum absorption sideband value of film absorption).

[0096] figure 2 UV-visible-near-infrared absorption spectra of polymer PBPT2V in chlorobenzene solution and thin film on quartz wafer. Depend on figure 2 It can be ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
molecular weightaaaaaaaaaa
number average molecular weightaaaaaaaaaa
molecular weightaaaaaaaaaa
Login to View More

Abstract

The invention belongs to the field of polymer semiconductor materials, and discloses a polymer semiconductor containing a bipyridine diazole derivative receptor and a preparation method and application thereof. A structure of the polymer semiconductor is shown in a formula (I), and the preparation method comprises the following steps: (1) reacting 2-tributyltin-4-alkylthiophene with a dibromobenzimidazole derivative to prepare an intermediate a; (2) reacting the compound a with a bis-butyltin b to obtain a compound c; (3) performing a reaction on the compound c and N-bromosuccinimide to obtainM1; and (4) performing a palladium-catalyzed coupling reaction on the M1 and (E)-bis1,2-(tri-n-butyltin)ethylene to obtain the final product. According to the invention, the synthetic route is simpleand high-efficiency, the raw materials are easy to obtain, the costs are low, the universality is high and the repeatability is good, and a field effect transistor prepared by using the polymer semiconductor as an active layer obtains outstanding bipolar transmission characteristics, and has wide market prospects.

Description

technical field [0001] The invention belongs to the field of polymer semiconductor materials, and relates to a polymer semiconductor containing a bispyridinediazole derivative acceptor, a preparation method and application thereof. Background technique [0002] Bipolar polymer semiconductor materials can simplify the preparation process of bipolar logic complementary circuits and reduce construction costs, but such materials face challenges such as low mobility, unbalanced carrier transport, and scarcity of building units. At present, high-mobility bipolar polymer semiconductor materials are mainly constructed from diketopyrrolopyrrole and isoindigo derivative units, and there are only a few polymer semiconductor materials with hole and electron mobilities that can exceed 4.0 cm at the same time. 2 / V s (J. Am. Chem. Soc., 2013, 135, 9540; Chem. Mater., 2014, 26, 6963; Adv. Mater., 2015, 27, 4963). Therefore, exploring new design strategies and finding new building blocks i...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C08G61/12H01L51/05H01L51/30
Inventor 陈华杰朱春光郑丽萍
Owner XIANGTAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com