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GaN-based semiconductor device and manufacturing method thereof

A gallium nitride-based, manufacturing method technology, applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve problems such as failure and reduction of enhancement characteristics of GaN-based semiconductor devices, and achieve the effect of improving enhancement characteristics

Active Publication Date: 2020-12-18
INNOSCIENCE (ZHUHAI) TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, in the field of GaN power semiconductors, since magnesium is easy to move to the aluminum gallium nitride layer, the enhanced characteristics of GaN-based semiconductor devices will be reduced or even failed.

Method used

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  • GaN-based semiconductor device and manufacturing method thereof
  • GaN-based semiconductor device and manufacturing method thereof
  • GaN-based semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0083] Such as image 3 As shown, GaN-based semiconductor devices, including:

[0084] The substrate 200 , the material of the substrate 200 in this embodiment is silicon.

[0085] The buffer layer 210 grown on the substrate 200 .

[0086]It can be understood that the buffer layer 210 is an alternating stack of one or more layers of low-temperature grown GaN layers, AlN layers and AlGaN layers. Among them, the temperature range of low-temperature growth is 500°C to 700°C. In order to reduce the high pressure caused by lattice mismatch in the early stage of low-temperature growth, the surrounding low-temperature growth layers will unite, which can fully reduce the energy level of the low-temperature growth layer, thereby increasing the low-temperature growth. The quality of the growth layer (prone to high temperature) on the growth layer.

[0087] Further, an aluminum nitride seed layer 270 may also be included between the substrate 200 and the buffer layer 210 .

[0088] A...

Embodiment 2

[0101] Such as Figure 5 As shown, GaN-based semiconductor devices, including:

[0102] The substrate 400 is made of silicon in this embodiment.

[0103] A buffer layer 410 grown on the substrate.

[0104] It can be understood that the buffer layer 410 is an alternate stack of one or more layers of low-temperature grown GaN layers, AlN layers and AlGaN layers.

[0105] Further, an aluminum nitride seed layer 470 may also be included between the substrate 400 and the buffer layer 410 .

[0106] An unintentionally doped GaN layer 420 (u-GaN) grown on the buffer layer 410 .

[0107] It can be understood that, in order to improve the thickness and crystallinity of the non-intentionally doped GaN layer, the non-intentionally doped GaN layer 430 includes a multi-layer strain control layer and a multi-layer mask layer; the layers of the strain control layer The number ≥ 0; the number of layers of the mask layer ≥ 0.

[0108] Doped In grown on the unintentionally doped GaN layer ...

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Abstract

The invention provides a gallium nitride-based semiconductor device and a manufacturing method thereof. The gallium nitride-based semiconductor device comprises a substrate, a buffer layer grown on the substrate, a non-intentionally doped gallium nitride layer grown on the buffer layer, a channel layer grown on the non-intentionally doped gallium nitride layer, a diffusion stop layer grown on thechannel layer, and a P-type gallium nitride cap layer grown on the diffusion stop layer. The diffusion stop layer is used for preventing dopants in the P-type gallium nitride cap layer from moving towards the channel layer, so that the concentration of dopants in the P-type doped gallium nitride cap layer is ensured. As a result, the effect of maintaining the enhancement characteristics of the gallium nitride-based semiconductor device is achieved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a gallium nitride-based semiconductor device and a manufacturing method thereof. Background technique [0002] The existing power semiconductor market is dominated by silicon power devices. In the past 20 years, the power density of silicon power devices has increased by 5 to 6 times every 10 years, but its power density is already close to the theoretical limit, and it is difficult to expect further improvement in performance. . [0003] Compared with silicon or gallium arsenide, gallium nitride (GaN) semiconductor has wide bandgap (Eg=3.4eV), excellent thermal stability, high breakdown voltage, high electron saturation drift velocity and excellent radiation resistance. In addition, compared with silicon power semiconductors, GaN power semiconductors have low-temperature resistance characteristics, which can reduce power conversion losses caused by power semiconductors a...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/20H01L29/205H01L29/207H01L29/778H01L21/335
Inventor 李尚俊
Owner INNOSCIENCE (ZHUHAI) TECH CO LTD
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