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Gain coupled distributed feedback semiconductor laser and manufacturing method thereof

A technology of distributed feedback and gain coupling, which is applied in the structure of optical waveguide semiconductors, optical resonant cavities, and active regions, can solve the problems of degraded spectral linewidth, low power, and low efficiency, and reduce production costs , low loss, and the effect of improving energy utilization efficiency

Active Publication Date: 2020-06-09
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of this, the present invention provides a gain-coupling distributed feedback semiconductor laser and its manufacturing method to solve the problems in the prior art that the gain-coupled distributed feedback semiconductor laser has low power and efficiency and deteriorates the spectral linewidth

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  • Gain coupled distributed feedback semiconductor laser and manufacturing method thereof
  • Gain coupled distributed feedback semiconductor laser and manufacturing method thereof
  • Gain coupled distributed feedback semiconductor laser and manufacturing method thereof

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Embodiment 1

[0063] The invention provides a method for manufacturing a gain-coupled distributed feedback semiconductor laser, such as figure 1 As shown, it is a schematic flow chart of the production method, such as figure 2 As shown, it is a three-dimensional schematic diagram of the final gain-coupled distributed feedback semiconductor laser; the manufacturing method includes:

[0064] S101: providing a substrate;

[0065] The specific material of the substrate is not limited in this embodiment, and optionally, the substrate may be an InP substrate or a GaAs substrate.

[0066] S102: sequentially forming an N-plane waveguide layer, an active layer, and a P-plane waveguide layer on the substrate, the P-plane waveguide layer has a raised structure, and the raised structure forms an optical waveguide.

[0067] See image 3 shown, along the figure 2 In the cross-sectional view of line BB' in the middle, an N-plane waveguide layer 12, an active layer 13, and a P-plane waveguide layer 1...

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Abstract

The present application provides a gain-coupled distributed feedback semiconductor laser and a manufacturing method thereof. The manufacturing method periodically regulates the carrier concentration distribution on the P surface, such as preparing a periodic conductive region by carrier injection, or by etching , oxidation and other means to periodically remove part of the structure of the original high-conductivity layer to form a periodic conductive region; because the carrier concentration control method will not cause damage to the optical waveguide, thereby avoiding the introduction of stress, oxidation and other changes in the properties of the optical waveguide. Moreover, the carrier concentration control is adopted to form high-concentration carriers in specific regions, and there is no carrier injection in unnecessary regions, so that the carrier-introduced loss is minimized for the entire optical waveguide, Especially when there is a back-end integrated device, the low loss can ensure that the energy of the laser is efficiently injected into the back-end integrated device along the optical waveguide, which improves the energy utilization efficiency.

Description

technical field [0001] The invention relates to the technical field of manufacturing semiconductor lasers, in particular to a gain coupling distributed feedback semiconductor laser and a manufacturing method thereof. Background technique [0002] Distributed feedback laser (DFB laser) is a single longitudinal mode laser. Due to its excellent spectral characteristics, it has a broad application market in laser communication, Internet of Things, Internet, space communication, gas detection, ocean detection and other fields. [0003] Because existing commercial DFB lasers are limited by the principle of refractive index coupling, the identical grating structure usually has two lasing peaks, and it is difficult to achieve single longitudinal mode operation, which cannot meet the needs of many application fields. In order to solve the problem of single longitudinal mode lasing, a periodic absorption medium can be prepared in the active region of the gain-coupled DFB laser, and pe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01S5/12H01S5/20H01S5/32
CPCH01S5/12H01S5/20H01S5/22H01S5/32
Inventor 陈泳屹贾鹏秦莉宁永强王立军
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI