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Sputtering target

A sputtering target and processing tank technology, used in sputtering, ion implantation, coating, etc., can solve problems such as unstable ignition process, shorten downtime, improve cost performance, and increase production capacity.

Active Publication Date: 2018-01-19
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Under such circumstances, for ultra-high-purity materials, the ignition process tends to become unstable, and there is a dilemma such as setting a low-purity product to improve the ignition success rate, or using a high-purity product to improve quality.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0049] In a tantalum sputtering target (purity of 4N5 or higher) with a diameter of 444 mm and a sputtering surface diameter of 406 mm, four V-shaped cross-sections are formed at equal intervals in parallel to the diameter direction of the target on the outer peripheral portion. Processing slot. A photograph of the target is shown in Figure 4 . The width of the groove is set to 6mm, the depth of the groove is set to 3mm, the length of the groove is set to 13mm in the flat part and 12mm in the tapered part, and the area ratio of the processed groove in the flat part is set to 0.24%. The area ratio of the processed grooves in the tapered portion was set to 1.1%. Next, sputtering was performed using this target under the following conditions, and the ignition failure rate ((number of ignition failures / number of ignition implementations)×100) was examined. The result: a significant reduction in ignition failure rate from 75% to 34.7% compared to the same type of target without...

Embodiment 2

[0060] In a tantalum sputtering target (purity of 4N5 or higher) with a diameter of 444 mm and a sputtering surface diameter of 406 mm, four V-shaped cross-sections are formed at equal intervals in parallel to the diameter direction of the target on the outer peripheral portion. Processing slot. The width of the groove is set to 3 mm, the depth of the groove is set to 3 mm, the length of the groove is set to 13 mm in the flat part and 12 mm in the tapered part, and the area ratio of the processed groove in the flat part is set to 0.12%. The area ratio of the processed grooves in the tapered portion was set to 0.6%. Next, sputtering was performed using this target under the same conditions as in Example 1, and the ignition failure rate of ignition was examined. The result: a significant reduction in ignition failure rate from 75% to 31.6% compared to the same type of target without machined grooves.

Embodiment 3

[0062] In a tantalum sputtering target (a purity of 4N5 or more) with a diameter of 444 mm and a sputtering surface diameter of 406 mm, four cross-sections U are formed parallel to the diameter direction of the target at equal intervals only on the tapered portion of the outer periphery. Font processing slot. The width of the groove is set to 3mm, the depth of the groove is set to 3mm, the length of the groove is set to 0mm in the flat part and 12mm in the tapered part, and the area ratio of the processed groove in the flat part is set to 0%. The area ratio of the processed grooves in the tapered portion was set to 0.6%. Next, this target was bonded to a backing plate, and then sputtering was performed under the following conditions, and the ignition failure rate ((number of ignition failures / number of ignition implementations)×100) was examined. The result: a significant reduction in ignition failure rate from 75% to 33.7% compared to the same type of target without machined...

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Abstract

Provided is a sputtering target equipped with a flat part and a taper part, wherein the sputtering target is characterized in that a machined groove for use in ignition is positioned on the sputteringsurface of the target. It is possible to lower the lighting failure rate during ignition (plasma lighting), and initiate the sputtering process consistently. In so doing, downtime of the device can be shortened, contributing to improved throughput and enhanced cost performance.

Description

technical field [0001] The present invention relates to a sputtering target capable of stably performing ignition (plasma ignition) during sputtering. Background technique [0002] The wiring of semiconductor integrated circuits is required to be thinner every generation, and sputtering, which is a kind of physical vapor deposition method, is used to form a thin film forming such wiring. In recent years, in order to increase the sputtering film formation rate, magnetron sputtering in which plasma is controlled by electromagnetic force has been widely used. In such state-of-the-art sputtering, a stable and easy-to-control target is indispensable. In the case where stable film formation cannot be performed due to failure of plasma ignition due to device stoppage or voltage fluctuation, etc., not only the productivity is lowered, but also the quality of the product may be deteriorated. In addition, if the control is difficult, when the film-forming conditions are intentionall...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34H05H1/46
CPCC23C14/3407H01J37/3417H01J37/3423C23C14/3414H01J37/3426C23C14/34
Inventor 村田周平山越康广永津光太郎
Owner JX NIPPON MINING & METALS CORP