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Method for forming ohmic contact and method for manufacturing semiconductor device

An ohmic contact and wafer technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, cleaning methods using liquids, etc., can solve the problems of low device yield, rough ohmic contact surface, and high ohmic contact resistance

Active Publication Date: 2020-08-25
WUHAN XINXIN SEMICON MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The object of the present invention is to provide a method for forming an ohmic contact and a method for manufacturing a semiconductor device, so as to solve the problems of rough ohmic contact surface, high ohmic contact resistance and low device yield in the prior art.

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  • Method for forming ohmic contact and method for manufacturing semiconductor device
  • Method for forming ohmic contact and method for manufacturing semiconductor device
  • Method for forming ohmic contact and method for manufacturing semiconductor device

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Embodiment Construction

[0025] The specific implementation of the method for forming an ohmic contact provided by the present invention will be described in more detail below with reference to schematic diagrams. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0026] figure 1 The flow chart of the method for forming the ohmic contact provided by this embodiment, such as figure 1 As shown, the method for forming an ohmic contact includes:

[0027] S1: providing a wafer, the wafer includes a substrate and a metal layer and a barrier layer sequentially formed on a predetermined region of the substrate;

[0028] S2: performing rapid thermal annealing on the wafer to form a metal silicide layer at the interface between the sub...

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Abstract

The present invention provides a method for forming an ohmic contact. After a metal silicide layer with thermal stability is formed, the barrier layer and the metal layer are removed to expose the metal silicide layer. The wafer is first cleaned with deionized water of a first preset temperature to decompose the oxide particles into small particles, and then deionized water of less than or equal to a second preset temperature is used to clean the wafer. Carry out the second cleaning, the deionized water flow rate of the second cleaning is greater than 50L / min, the impact force of the water flow is large, and the oxide particles can be removed, and the wafer is subjected to two cleaning operations by using water flows of different temperatures and different flow rates. It has a better cleaning effect and can achieve the effect of removing oxide particles on the metal silicide layer, effectively reducing the oxide particles on the metal silicide layer, and making the ohmic contact surface change. smoothing, improving device reliability and yield.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming an ohmic contact and a method for manufacturing a semiconductor device. Background technique [0002] Ohmic contact is a key process technology in semiconductor manufacturing. Its purpose is to make the voltage drop at the contact of the semiconductor material small enough to not affect the performance of the device when a voltage is applied. If the reliability of the ohmic contact resistance is poor, the on-state resistance of the device will increase, and in severe cases, the performance of the device will be affected. [0003] In existing chip designs, ohmic contacts usually use special refractory metals as contacts on the surface of silicon to reduce resistance and enhance adhesion. However, the ohmic contact surface formed in the subsequent process is very rough, so the ohmic contact resistance is high, and even fails, so that the reliability ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02H01L21/28H01L29/45B08B3/02
Inventor 杨德林
Owner WUHAN XINXIN SEMICON MFG CO LTD
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