Insulated gate bipolar transistor structure and manufacturing method thereof
A technology of bipolar transistors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as high cost, high difficulty, increasing device 200 manufacturing difficulty and product cost, and achieve low manufacturing cost Difficulty and cost, low conduction energy loss, and the effect of enhancing dual competitiveness
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no. 1 example
[0070] image 3 Shown in is a schematic diagram of the cross-sectional structure of the IGBT device 300 according to the first embodiment of the present invention. The composition of the device 300 includes: a collector (C pole) (122) is located at the bottom of the device, and a p-type collector layer (ie, the first semiconductor layer of the first conductivity type) (106) is located between the collector (122) On, an n-type buffer layer (i.e. the second semiconductor layer of the second conductivity type) (105) is located on the p-type collector layer (106), an n - type drift region (i.e. the third semiconductor drift region of the second conductivity type) (101) is located on the n-type buffer layer (105), one or more from the n-type - The upper surface of the type drift region (101) extends into n - The gate groove (110) of the type drift region (101), one or more dummy grooves (210) near the gate groove (110) and parallel to the gate groove (110), and a gate electrode (...
no. 2 example
[0076] Figure 24 Shown in is a schematic diagram of the cross-sectional structure of the IGBT device 400 according to the second embodiment of the present invention. It should be pointed out that in Figure 24 structure shown, with the above image 3 The same or equivalent structures shown in are given the same symbols, and descriptions of these symbols may not be repeated here. Similar to the device 300 described in the first embodiment, a feature of the device 400 is to have an n-type barrier layer (203) implanted and diffused from the sidewall of the dummy trench (210). However, different from the device 300, the device 400 also has an electrically floating first electrically floating p-type region (202) between adjacent dummy trenches (210). In the forward conduction state of the device 400, hole carriers can accumulate in the first electrically floating p-region (202) and avoid drifting to the p-type body region (102). This design is beneficial to further improve n ...
no. 3 example
[0078] Figure 25 Shown in is a schematic diagram of the cross-sectional structure of the IGBT device 500 according to the third embodiment of the present invention. It should be pointed out that in Figure 25 structure shown, with the above Figure 3-6 The same or equivalent structures shown in are given the same symbols, and descriptions of these symbols may not be repeated here. Similar to the device 400 described in the second embodiment, a feature of the device 500 is that it has an n-type barrier layer (203) implanted and diffused from the sidewall of the dummy trench (210), and the adjacent dummy trench There is also an electrically floating second electrically floating p-type region (204) between (210). However, unlike device 400, in device 500, the second electrically floating p-type region (204) is deeper. In addition, the doping concentration of the second electrically floating p-type region (204) can be greater than the doping concentration of the n-type barrie...
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