Manufacturing method of practical radio-frequency MEMS switch

Abstract

The invention relates to the manufacturing field of MEMS devices, in particular to a manufacturing method of a practical radio-frequency MEMS switch. The manufacturing method mainly comprises the steps of silicon wafer cleaning, silicon nitride growth on a high-resistance silicon wafer surface, coplanar waveguide electroplating, upper electrode plate electroplating, aluminum pull-down electrode manufacturing and sacrificial layer release. The flatness of a lower contact electrode of the radio-frequency MEMS switch manufactured by adopting the technical scheme is higher, and the radio-frequencyMEMS switch has the relatively higher finished product rate, relatively longer service life, lower plug-in loss and higher in isolation degree.

Description

technical field [0001] The invention relates to the field of MEMS device manufacturing, in particular to a manufacturing method of a practical radio frequency MEMS switch. Background technique [0002] In the prior art, the RF MEMS switch, as a passive device, transmits or isolates microwave signals through the capacitance formed by metal-metal contact or metal-insulating medium-metal, and has the advantages of low insertion loss and high isolation. From ubiquitous smart sensor networks, mobile phones, to test equipment and military radar, RF MEMS switches have broad application prospects. In addition, RF MEMS switches can greatly reduce the size, weight and price of reconfigurable systems, becoming an indispensable and important technology in the 21st century. [0003] Although RF MEMS has begun to develop in China, there is still a big gap compared with foreign countries, such as the United States, Europe, Japan and South Korea, in terms of MEMS research and manufacturing...

AI Technical Summary

Problems solved by technology

[0003] Although RF MEMS has begun to develop in China, there is still a big gap compared with foreign countries, such as the United States, Europe, Japan and South Korea, in terms of MEMS research and manufacturing capabilities

[0004] At present, the main problems of domestic switches are: 1. The flatness of electroplating CPW is low, which seriously affects the microwave characteristics of the switch; 2. Due to the process error, the weak contact problem of the double contacts when the switch is closed seriously affects the life of the switch.