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Preparation method of discontinuous double-sided heterojunction sandwich structure tin dioxide-nickel oxide-tin dioxide, product of preparation method, and application of discontinuous double-sided heterojunction sandwich structure

A tin dioxide, sandwich structure technology, applied in nickel oxide/nickel hydroxide, tin oxide, instruments, etc., can solve the problems of poor selectivity, low sensitivity, slow response and recovery, etc.

Active Publication Date: 2018-01-30
上海禾澜纳米科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] The main problems of current NiO-based sensor materials are low sensitivity, slow response and recovery, and poor selectivity.
The first two problems are partly caused by p-type semiconductors relying on the gas-sensing properties of the hole depletion layer, while the latter is a common problem of all metal oxides

Method used

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  • Preparation method of discontinuous double-sided heterojunction sandwich structure tin dioxide-nickel oxide-tin dioxide, product of preparation method, and application of discontinuous double-sided heterojunction sandwich structure
  • Preparation method of discontinuous double-sided heterojunction sandwich structure tin dioxide-nickel oxide-tin dioxide, product of preparation method, and application of discontinuous double-sided heterojunction sandwich structure

Examples

Experimental program
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Embodiment 1

[0020] (1) Dissolve 0.5 mol / l nickel chloride in 50 ml deionized water to form Ni 2+ Solution, after stirring at 200 rpm for 30 min, hexamethyltetramine was added at room temperature and continued to stir for 1 h at the same stirring speed, and the flow rate of nitrogen was 5 ml / min, and then the temperature was raised to 90 o C is reacted for 1h, and the Ni(OH) produced 2 The precipitate was centrifuged and washed 3 times with deionized water, dried in an oven for 24 h, and immersed in 0.5 mol / l SnCl 4 After being placed in the solution for 24 hours, it was dried in a muffle furnace at 500 o C sintered for 3 h to obtain SnO with discontinuous double-sided heterojunction sandwich structure 2 -NiO-SnO 2 , see figure 1 This example synthesizes SnO with a discontinuous double-sided heterojunction sandwich structure 2 -NiO-SnO 2 The scanning electron microscope photo, the response to formaldehyde gas see figure 2 Example 1 Synthesis of SnO with discontinuous double-sided h...

Embodiment 2

[0022] (1) Dissolve 1.2 mol / l nickel chloride in 50 ml deionized water to form Ni 2+ Solution, after stirring at 300 rpm for 30 min, add hexamethyltetramine at room temperature and continue stirring at the same stirring speed for 1 h, feed nitrogen flow rate at 15 ml / min, then heat up to 90 o C is reacted for 1h, and the Ni(OH) produced 2 The precipitate was centrifuged and washed 3 times with deionized water, dried in an oven for 24 h, and immersed in 2 mol / l SnCl 4 After being placed in the solution for 24 hours, it was dried in a muffle furnace at 800 o C sintered for 3 h to obtain SnO with discontinuous double-sided heterojunction sandwich structure 2 -NiO-SnO 2 .

Embodiment 3

[0024] (1) Dissolve 0.9 mol / l nickel chloride in 50 ml deionized water to form Ni 2+ Solution, after stirring at 250 rpm for 30 min, add hexamethyltetramine at room temperature and continue stirring at the same stirring speed for 1 h, feed nitrogen flow rate at 10 ml / min, then heat up to 90 o C is reacted for 1h, and the Ni(OH) produced 2 The precipitate was centrifuged and washed 3 times with deionized water, dried in an oven for 24 h, and immersed in 1.2 mol / l SnCl 4 After being placed in the solution for 24 hours, it was dried in a muffle furnace at 750 o C sintered for 3 h to obtain SnO with discontinuous double-sided heterojunction sandwich structure 2 -NiO-SnO 2 .

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Abstract

The invention discloses a preparation method of discontinuous double-sided heterojunction sandwich structure tin dioxide-nickel oxide-tin dioxide, the product of the preparation method, and application of the discontinuous double-sided heterojunction sandwich structure. The preparation method comprises the following steps: dissolving a precursor of nickel into deionized water to form a Ni<2+> solution, evenly stirring, then adding hexamethyl tetramine at the room temperature, and continuously stirring; continuously introducing nitrogen, then heating up to 90 DEG C and carrying out a reaction;carrying out centrifugal washing on the prepared Ni(OH)2 precipitate for three times, drying the product in a drying oven for 24h, then soaking into an SnCl4 solution, putting the product into a muffle furnace and sintering for 3h at the temperature of 500-800 DEG C so as to obtain the discontinuous double-sided heterojunction sandwich structure. According to the preparation method, a longer-timereaction process is not needed, and the performance of a gas-sensitive element is regulated by controlling the concentration, size and distribution of a heterojunction structure. The preparation method is simple to operate; the prepared heterojunction sandwich structure is uniform in size distribution and controllable in structure, thus being used for a gas sensitivity sensor, a supercapacitor electrode, a positive pole of a solar cell, and the like.

Description

technical field [0001] The invention relates to the preparation technology of a semiconductor gas sensor, in particular to a preparation method of a discontinuous double-sided heterojunction sandwich structure tin dioxide-nickel oxide-tin dioxide and its product and application. Background technique [0002] The main problems of current NiO-based sensor materials are low sensitivity, slow response and recovery, and poor selectivity. The first two problems are partly due to the p-type semiconductor's dependence on the gas-sensing properties of the hole-depletion layer, while the latter is a common problem for all metal oxides. It has been proved to be an effective method in many systems to construct a heterojunction by compounding different metal oxide semiconductor materials, and to expand the space charge depletion layer / hole accumulation layer to improve sensitivity and selectivity. [0003] If the porous hollow structure and heterojunction can be combined in the preparat...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G53/04C01G19/02G01N27/00
Inventor 何丹农张芳葛美英吴晓燕段磊金彩虹
Owner 上海禾澜纳米科技有限公司