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A scalable method for the fabrication of high-density n-doped graphene materials

A high-density, graphene technology, applied in the direction of graphene, chemical instruments and methods, nano-carbon, etc., can solve the problem that high-density graphene materials are difficult to mass-produce, and achieve simple and easy operation steps and high packing density , to prevent the effect of re-stacking

Active Publication Date: 2020-04-07
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

These pretreatment processes make high-density graphene materials difficult to mass-produce

Method used

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  • A scalable method for the fabrication of high-density n-doped graphene materials
  • A scalable method for the fabrication of high-density n-doped graphene materials
  • A scalable method for the fabrication of high-density n-doped graphene materials

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0038] A kind of preparation method of the graphene material of high-density N doping, comprises steps as follows:

[0039] (1) Dilute the GO dispersion to a concentration of 3mg mL -1 The dispersion liquid is uniformly dispersed by ultrasonic, and is used for standby; the PEI solution is diluted to a solution with a concentration of 0.1 wt.%, and is uniformly dispersed by ultrasonic, and is used for standby.

[0040] (2) Take 10 mL of GO dispersion in the reactor for magnetic stirring, slowly drop 1 mL of PEI solution into the GO dispersion, and the GO-PEI complex is immediately precipitated.

[0041](3) After the dropwise addition, the reaction system was aged, and the GO-PEI complex precipitated and gathered at the bottom of the reaction vessel, and the unreacted PEI was removed by vacuum filtration and washing operations.

[0042] (4) The filtered product was dried at room temperature for 12 hours, and a high-density GO-PEI composite material was obtained through capillar...

Embodiment 2

[0045] A kind of preparation method of the graphene material of high-density N doping, comprises steps as follows:

[0046] (1) Dilute the GO dispersion to a concentration of 0.1mg mL -1 The dispersion liquid is uniformly dispersed by ultrasonic, and is used for standby; the PEI solution is diluted to a solution with a concentration of 0.01wt.%, and is uniformly dispersed by ultrasonic, and is used for standby.

[0047] (2) Take 10L of GO dispersion in the reactor for magnetic stirring, slowly drop 1L of PEI solution into the GO solution, and the GO-PEI complex is immediately precipitated.

[0048] (3) After the dropwise addition, the reaction system was aged, and the GO-PEI complex precipitated and gathered at the bottom of the reaction vessel, and the unreacted PEI was removed by vacuum filtration and washing operations.

[0049] (4) The filtered product was dried at room temperature for 24 hours, and a high-density GO-PEI composite material was obtained through capillary s...

Embodiment 3

[0052] A kind of preparation method of the graphene material of high-density N doping, comprises steps as follows:

[0053] (1) Dilute the GO dispersion to a concentration of 5 mg mL -1 The dispersion liquid is uniformly dispersed by ultrasonic, and is used for standby; the PEI solution is diluted to a solution with a concentration of 10wt.%, and is uniformly dispersed by ultrasonic, and is used for standby.

[0054] (2) Take 10 mL of GO dispersion in the reactor for magnetic stirring, slowly drop 1 mL of PEI solution into the GO dispersion, and the GO-PEI complex is immediately precipitated.

[0055] (3) After the dropwise addition, the reaction system was aged, and the GO-PEI complex precipitated and gathered at the bottom of the reaction vessel, and the unreacted PEI was removed by vacuum filtration and washing operations.

[0056] (4) The filtered product was dried at room temperature for 12 hours, and a high-density GO-PEI composite material was obtained through capillar...

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Abstract

The invention relates to an expandable preparation method of a high-density N-doped graphite material, which includes steps of mixing GO dispersing fluid with PEI solution to obtain GO-PEI composite;drying and roasting the GO-PEI composite. An amino functional group of the PEI can reduce the GO oxygen content on a certain degree and effectively stop the thermal expansion caused by decomposing massive oxygen-containing functional groups to be gas during the process of roasting the samples, so that the material density is greatly reduced. The vibration density of the material and the balance regulation of the surface area can be realized by controlling the PEI addition. The reaction process is free from adding metal salt type pore forming substance or activating reagent; thus the original framework structure of the graphite can be well kept, and the operation step is simple and easy to carry out.

Description

technical field [0001] The invention relates to a scalable preparation method of a high-density N-doped graphene material, belonging to the technical field of electrode materials. Background technique [0002] Graphene is a single layer of carbon atoms with sp 2 The two-dimensional crystal formed by hybrid connection has a honeycomb structure, and its theoretical thickness is only It is the thinnest two-dimensional material found so far. The special structure enables graphene to exhibit many excellent properties, such as large specific surface area, good light transmission, strong electrical and thermal conductivity, and excellent mechanical properties. In addition, it also has the advantages of good chemical stability and environmental friendliness. These excellent properties of graphene make it have great application value, and the application fields that have been widely developed include supercapacitors, lithium-ion batteries, solar cells, adsorption of pollutants an...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/184H01G11/24H01G11/36H01G11/48
CPCC01B2204/20C01B2204/22C01P2002/80C01P2002/85C01P2004/03H01G11/24H01G11/36H01G11/48Y02E60/13
Inventor 侯士峰岳芳刘靓蕾郑逸群王华张军峰
Owner SHANDONG UNIV
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