Semiconductor structure formation method
A semiconductor and gate structure technology, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as uneven distribution of contact resistivity and unstable performance of semiconductor structures, and achieve improved semiconductor performance. Structural properties, increasing concentration, and reducing the effect of resistance
Active Publication Date: 2018-02-23
SEMICON MFG INT (SHANGHAI) CORP +1
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Problems solved by technology
[0004] However, the contact resistivity distribution between the source-drain doped region and the plug of the semiconductor structure formed in the prior art is not uniform, and the performance of the semiconductor structure is unstable.
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[0027] There are many problems in the method for forming the semiconductor structure, for example, the performance of the formed semiconductor structure is poor.
[0028] In combination with a method for forming a semiconductor structure, the reasons for the poor performance of the semiconductor structure formed by the method are analyzed:
[0029] Figure 1 to Figure 3 It is a structural schematic diagram of each step of a method for forming a semiconductor structure.
[0030] Please refer to figure 1 , providing a base, the base includes: a substrate 100, a gate structure 110 located on the substrate 100; a source-drain doped region 120 located in the substrate 100 on both sides of the gate structure 110, located on the The underlying dielectric layer 102 on the substrate 100 and the source-drain doped region 120 .
[0031] continue to refer figure 1 , forming a dielectric layer 101 on the substrate.
[0032] Please refer to figure 2 , forming a contact hole 111 pene...
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The invention provides a semiconductor structure formation method, which comprises the following steps: forming a base, wherein the base comprises a substrate, a gate structure arranged on the substrate, source and drain doped regions arranged in the substrate at the two sides of the gate structure, and a dielectric layer arranged on the substrate and on the top portion of the gate structure; forming a contact hole running through the dielectric layer, wherein the bottom portion of the contact hole extends to the source and drain doped regions; after forming the contact hole, injecting dopingirons into the source and drain doped regions through a doping process to form a doped layer in the source and drain doped regions exposed by the side wall and the bottom portion of the contact hole;and after forming the doped layer, forming a plug in the contact hole. The formation method can enable the doping ions to be uniformly distributed in the source and drain doped regions, so that resistivity distribution between the plug and the source and drain doped regions is allowed to be uniform, and performance of the formed semiconductor structure can be improved.
Description
technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the continuous advancement of semiconductor technology, the feature size of semiconductor devices is gradually reduced. The reduction of critical dimensions means that more transistors can be arranged on the chip, and at the same time, higher requirements are placed on the semiconductor process. [0003] Source-drain doped regions and gate structures are important components of transistors. The transistor realizes the electrical connection with the external circuit by forming a plug on the source-drain doped region. The concentration of doping ions in the source-drain doping region has a great influence on the contact resistance between the plug and the source-drain doping region, the higher the concentration of doping ions in the source-drain doping region, the smaller the co...
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IPC IPC(8): H01L21/8238H01L21/336
CPCH01L21/823821H01L21/823871H01L29/66795H01L21/76897H01L21/76805H01L21/76814H01L27/092H01L29/66636H01L29/78H01L21/823814H01L27/0924H01L29/0847H01L29/167H01L21/76856H01L21/76858H01L21/76895H01L23/535H01L29/1608H01L29/161
Inventor 谢欣云
Owner SEMICON MFG INT (SHANGHAI) CORP