Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for removing protective layer on device surface

A device surface and protective layer technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as incomplete removal of protective layers and damage to device metal layers.

Active Publication Date: 2020-03-13
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF4 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a method for removing the protective layer on the surface of the device to solve the problems in the prior art that the removal of the protective layer on the surface of the device is incomplete and the metal layer on the surface of the device is damaged

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for removing protective layer on device surface
  • Method for removing protective layer on device surface
  • Method for removing protective layer on device surface

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0044] see figure 2 , which shows a specific flow chart of the removal method of the polyimide layer described in Embodiment 1 of the present invention, the removal method comprising:

[0045] Step S11, softening the polyimide layer;

[0046] Step S12, coating a photoresist layer on the surface of the device, the photoresist layer covering the metal layer and the softened polyimide layer;

[0047] Step S13, exposing and developing the photoresist layer, removing the photoresist on the polyimide layer, and forming a protective sub-pattern on the metal layer;

[0048]Step S14, using fast atom bombardment to bombard the softened polyimide layer, so that the chemical bonds in the softened polyimide layer are broken;

[0049] Step S15 , removing the broken polyimide layer by ashing method.

[0050] Next, in order to describe the removal method described in this embodiment more clearly, please refer to Figure 3-Figure 7 , which shows a schematic structural diagram correspondin...

Embodiment 2

[0062] see Figure 8 , which shows a specific flow chart of the removal method of the polyimide layer described in Embodiment 2 of the present invention, the removal method comprising:

[0063] Step S21, coating a photoresist layer on the surface of the device, the photoresist layer covering the metal layer and the polyimide layer;

[0064] Step S22, exposing and developing the photoresist layer, removing the photoresist on the polyimide layer, and forming a protective sub-pattern on the metal layer;

[0065] Step S23, softening the polyimide layer;

[0066] Step S24, using fast atom bombardment to bombard the softened polyimide layer, so that the chemical bonds in the softened polyimide layer are broken;

[0067] Step S25 , using an ashing method to remove the broken polyimide layer.

[0068] see Figure 9 to Figure 11 , the reference numerals denote the same Figure 3-Figure 7 The same expression and the same structure in the removal method of the first embodiment, the ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a removal method for a protection layer on a surface of a device. The removal method comprises the steps of softening the protection layer; bombarding the softened protection layer by employing a rapid atomic bombardment mode so that a chemical bond in the softened protection layer is broken; and removing the broken protection layer by an ashing method. By softening the protection layer, the hardness of the cured protection layer is reduced; with the adoption of the rapid atomic bombardment mode, the chemical bond of a protection layer material is broken, more broken chemical bonds are formed, so that the property of the protection layer is changed, and the subsequent ashing process is facilitated; and finally, the broken protection layer material can be easily removed by an ashing mode. With the adoption of the removal method provided by the invention, the protection layer can be completely removed, and the subsequent rework process and the electric property ofan electrical appliance cannot be affected.

Description

technical field [0001] The invention relates to the field of integrated circuit manufacturing, in particular to a method for removing a protective layer on a device surface. Background technique [0002] In the semiconductor process, polyimide (Polyimide, PI) is more and more widely used, such as metal-insulator-metal (Metal Insulator Metal, MIM) capacitor production, photoresist materials, and protective layers. Polyimide (Polyimide, PI) is an organic polymer material, which has the characteristics of high temperature resistance, radiation resistance, good insulation performance, corrosion resistance, and stable chemical properties. The amine resin is used as a protective layer to isolate the device from external water vapor and dust and other pollutants, thereby ensuring the insulation and other characteristics of the device. [0003] Then, due to the increasingly high requirements for polyimide, it often occurs in the actual process that the polyimide layer needs to be r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCH01L21/02032
Inventor 李广宁
Owner SEMICON MFG INT (SHANGHAI) CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com