34results about How to "Will not affect the process" patented technology

The embodiment of the invention provides an LED growth method for P-type layer coarsening. The method includes the steps that when the temperature ranges from 520 DEG C to 560 DEG C, a metal source is fed onto a substrate, and the metal source reacts with ammonia to form a buffer layer; when the temperature rises to 800-1000 DEG C, the buffer layer forms a non-doping layer; when the temperature rises to 1000-1100 DEG C, an N-type doping layer grows on the surface of the non-doping layer; a quantum well layer grows on the surface of the N-type doping layer; a P-type doping layer grows on the surface of the quantum well layer; when the temperature is decreased to 500-700 DEG C, the metal source is fed onto the surface of the P-type doping layer, so that a thin metal source layer is formed; when the temperature rises to 700-800 DEG C, the thin metal source layer is decomposed into prills, and the prills react with V-group gas to form spherical crystal. According to the method, bad damage to device structures can be avoided, and no special effect on the chip process is caused.

The present invention provides a chip encapsulation structure, a manufacture method thereof and an electrostatic powder spraying device. The chip encapsulation structure includes a circuit substrate, an adhesive layer arranged on the circuit substrate, and a chip arranged on the adhesive layer; and the side wall of the chip is provided with a non-stick material layer. The manufacture method of the chip encapsulation structure includes the following steps that: a chip for encapsulation is provided; a non-stick material layer is arranged on the side wall of the chip; a circuit substrate for carrying the chip is provided; an adhesive layer is arranged on the circuit substrate; the chip is arranged on the adhesive layer, and the bottom of the chip is completely covered with the adhesive layer; and the adhesive layer is heated, so that the adhesive layer can be cured. According to the chip encapsulation structure, the manufacture method thereof and the electrostatic powder spraying device of the invention, the non-stick material layer is arranged on the side wall of the chip, so that the overflowed adhesive layer will not adhere to the upper surface of the chip, and therefore, the malfunctioning of the chip can be avoided, the reliability of the chip can be ensured, and the quality of the chip encapsulation structure can be improved.

The invention discloses an intelligent ironing and compacting filing cabinet, which comprises a cabinet body, wherein a driving mechanism, a ironing mechanism, a conveying device and several lockers are arranged in the cabinet, and the ironing mechanism includes a second support block and an ironing drawer, one side of the ironing drawer is provided with a baffle for limiting the position of the paper, the longitudinal section of the baffle is a continuous curve, and the curve is arched, and a second A rotating shaft, the two ends of the second rotating shaft are hinged to the support rod through the second telescopic rod, when the ironing drawer is pulled out or pushed in, the second rotating shaft rises as the height of the baffle changes or drop. The invention provides an intelligent ironing and compacting file cabinet, which can quickly and efficiently organize files to a predetermined position, and at the same time iron curled and wrinkled paper, and can also iron files of different thicknesses. After ironing, it is stored in the locker in an oblique manner, and is pressed by a pressing mechanism to keep it in a flat state all the time.

The invention discloses an arc extinguishing method for a magnetron sputtering process. First, the output voltage and current of a magnetron sputtering power supply are sampled, and arc detection is performed according to the voltage slope and current amplitude to determine whether an arc is generated; secondly, according to Arc classification is performed on the magnitude of the current generated by the arc, and the arc is divided into a first arc type and a second arc type; finally, arc extinguishing treatment is performed on the first arc type and the second arc type respectively. The invention can quickly detect and extinguish the arc generated in the magnetron sputtering process, the method is simple, feasible and easy to realize, and makes up for the problems of false detection and missing detection and loss of process intervals in the previous arc detection and extinguishing methods, and can effectively Protect sputtering targets, process bays and power supplies.

The present invention provides a method used for reducing wafer edge yield test problem. The method comprises a first step of obtaining a patterned photomask and the patterned photoresist adopted to execute the photoetching on a passivation layer of a wafer; a second step of inverting the patterned photomask to obtain an inverted patterned photomask, and changing the positive and negative attributes of the patterned photoresist on the condition of keeping a constant photoresist pattern to obtain the reverse patterned photoresist; a third step of utilizing the inverted patterned photomask and the reverse patterned photoresist to execute the photoetching on the wafer. According to the method used for reducing the wafer edge yield test problems of the present invention, the photomask and the photoresist of the passivation layer both become inverted, so that the figures of other parts, except a predetermined part starting at an edge position, in the wafer, do not change, and the passivation layer is retained from the edge to the predetermined part, and accordingly, a test false failure problem is not generated.

The invention discloses a large-diameter HDPE plastic steel winding pipeline installation construction process. The problems that a heat shrinkable tape anticorrosion repaired mouth is baked mainly though artificial flame, and especially for a large-diameter pipeline, heating is nonuniform during construction are solved. According to the main points of the technical scheme, the inside and the outside of a connector between pipelines is welded and sealed through a heat shrinkable tape; heat shrinkable tape welding and sealing comprise the steps that preheating is conducted through manual target baking heating till the temperature of the pipeline connector is 50 DEG C-70 DEG C; epoxy primer with the thickness not smaller than 150 [mu]m is brushed on the pipeline connector evenly; the rubber face of the heat shrinkable tape is attached to the outer side face of the pipeline connector; and annular heating equipment is installed on the outer side of a pipeline repaired mouth, and the repaired mouth is heated and based till complete fusion is achieved; and a good adhesion effect is ensured, thus the service life of the heat shrinkable tape is longer, zero leakage of the pipelines is achieved, fluid in the pipelines does not flow out, and a better environmental protection effect is archived.

The invention discloses a removal method for a protection layer on a surface of a device. The removal method comprises the steps of softening the protection layer; bombarding the softened protection layer by employing a rapid atomic bombardment mode so that a chemical bond in the softened protection layer is broken; and removing the broken protection layer by an ashing method. By softening the protection layer, the hardness of the cured protection layer is reduced; with the adoption of the rapid atomic bombardment mode, the chemical bond of a protection layer material is broken, more broken chemical bonds are formed, so that the property of the protection layer is changed, and the subsequent ashing process is facilitated; and finally, the broken protection layer material can be easily removed by an ashing mode. With the adoption of the removal method provided by the invention, the protection layer can be completely removed, and the subsequent rework process and the electric property ofan electrical appliance cannot be affected.

The present invention relates to the field of moulds, in particular to a die-casting mold for automatically cleaning insert holes, comprising a fixed seat, an upper mold mechanism and a lower mold mechanism matched with the upper mold mechanism, the lower mold mechanism and the upper mold mechanism are installed on The upper end of the fixed seat and the upper mold mechanism are located directly above the lower mold mechanism, and the upper mold mechanism includes an upper mold assembly and at least one limiting assembly, all of which are installed on the upper mold assembly, and the lower mold The mechanism includes a lower mold assembly, an overturning assembly, a blowing assembly, a mold ejection assembly and a limit assembly. The mold assemblies are all installed inside the lower mold assembly, the limiting assembly is arranged at the rear end of the fixing seat and the limiting assembly is matched with the lower mold assembly. The invention can effectively improve the automatic cleaning effect of the mould, and will not cause residues to splash during the cleaning process, thereby avoiding potential safety hazards.