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A dielectric thin-film solid-state light-emitting device based on silicon surface microstructure

A dielectric film and solid-state lighting technology, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of high operating voltage of devices, small number of conductive paths, and poor luminous performance of devices, so as to improve the luminous performance of devices and reduce operating voltage , Improve the effect of luminous performance

Active Publication Date: 2019-07-19
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The formation and stability of the conductive path are the key to the light emission of the device. At present, the formation of the conductive path in the dielectric layer is random, and the diameter is small, the luminous performance of the device is poor, and the number of conductive paths is small, the operating voltage of the device higher

Method used

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  • A dielectric thin-film solid-state light-emitting device based on silicon surface microstructure
  • A dielectric thin-film solid-state light-emitting device based on silicon surface microstructure
  • A dielectric thin-film solid-state light-emitting device based on silicon surface microstructure

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Embodiment Construction

[0025] The present invention is described in further detail below in conjunction with accompanying drawing:

[0026] refer to figure 2 The dielectric thin-film solid-state light-emitting device based on the microstructure of the silicon surface according to the present invention includes a signal electrode 8, an ITO electrode 5, an insulating dielectric layer 3, a silicon substrate 1 and a back electrode 7 distributed sequentially from top to bottom, wherein the silicon The upper surface of the substrate 1 is provided with a silicon surface microstructure 2 .

[0027] refer to Figure 5a , the silicon surface microstructure 2 is a plurality of protrusions arranged on the upper surface of the silicon substrate 1 and arranged in an array; each protrusion is a conical structure.

[0028] refer to Figure 5b , the silicon surface microstructure 2 is a plurality of elongated protrusions arranged on the upper surface of the silicon substrate 1; each elongated protrusion is distr...

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Abstract

The invention discloses a silicon surface microstructure based dielectric film solid state light emitting device. The device includes a signal electrode, an ITO electrode, an insulation dielectric layer, a silicon substrate and a back electrode distributed in sequence from top down, wherein the upper surface of the silicon substrate is provided with a silicon surface microstructure. The working voltage of the light emitting device is comparatively low, the number of conducting paths is large and the diameters of the conducting paths are comparatively large, so that the light emitting performance of the device is good.

Description

technical field [0001] The invention belongs to the field of solid-state lighting, relates to the field of flat panel display, and in particular relates to a dielectric thin-film solid-state light-emitting device based on silicon surface microstructure. Background technique [0002] Solid-State Incandescent Lighting Emitting Devices (SSI-LEDs), first proposed by Professor Yue Kuo of Texas A&M University (TAMU), is a new type of white light emitting device. [0003] Different from the complex quantum well structure used in traditional LEDs, SSI-LEDs adopt a simple MOS device structure, and the core light-emitting layer is HfO 2 Dielectric film with high dielectric constant. The light-emitting principle of SSI-LEDs devices is also different from that of traditional LEDs. When a voltage is applied across the device, the dielectric film with high dielectric constant breaks down under the action of an electric field, forming a permanent conductive path, and the current passes th...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00
CPCH01L33/0037
Inventor 吴胜利杨灿刘逸为张劲涛
Owner XI AN JIAOTONG UNIV