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A kind of soi-rc-ligbt device and preparation method thereof

A device, N-type technology, applied in the field of power semiconductor devices, can solve the problem that IGBT cannot be fully turned on, and achieve the effects of eliminating the Snapback phenomenon, improving the distribution of the electric field, and increasing the breakdown voltage

Active Publication Date: 2021-03-16
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This will prevent the IGBTs from being fully turned on in parallel applications, resulting in reliability issues

Method used

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  • A kind of soi-rc-ligbt device and preparation method thereof
  • A kind of soi-rc-ligbt device and preparation method thereof
  • A kind of soi-rc-ligbt device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] A SOI-RC-LIGBT device comprising: from the bottom to top, the N-type substrate 9, the buried oxide layer 8, and the n-type drift region 15; one end of the N-type drift region 15 is provided with a gate dielectric layer 7 The groove gate structure composed of the gate electrode 6, the gate electrode 6 is located inside one side of the gate dielectric layer 7; the inside of the N-type drift region 15 is provided with a P-type base 5, and N is provided above the p-type base 5 + Source regions 2 and P + Contact zone 4, the P-type foundation 5 and N + The sides of the source region 2 are in contact with the side surface of the gate dielectric layer 7; the N + Source regions 2 and P +Above the contact zone 4 has an emitter 3, and the gate dielectric layer 7 and the gate electrode 6 are oxidized layer 1; one end of the inside of the N-type drift zone 15 is located at one end of the trench gate structure with an N-type buffer 14, Above the inside of the n-type buffer 14 is provided...

Embodiment 2

[0052] The present embodiment and the first embodiment are substantially identical, and the difference is that the P-type buried layer 17 is composed of a plurality of regions that are sequentially reduced from left to right.

Embodiment 3

[0054] The present embodiment and the first embodiment are substantially identical, and the difference is that the n-type strip 16 consists of a plurality of regions increasing from left to right.

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Abstract

The invention provides an SOI-RC-LIGBT device and a preparation method thereof, comprising an N-type substrate, a buried oxide layer, an N-type drift region, a trench gate structure, a P-type base region, an N-type + source region and P + Contact area, emitter, oxide layer, N-type buffer area, P-type collector area; there is an N-type strip on the surface of the N-type drift area between the P-type base area and the N-type buffer area, and the drift area below the N-type bar It has a P-type buried layer; there is a dielectric groove structure between the right side of the N-type strip and the right side of the P-type buried layer, and the left side of the N-type buffer layer and the left side of the P-type collector region; the N-type strip and the dielectric There is an N+ collector region between the groove structures; the SOI-RC-LIGBT proposed by the present invention can improve the breakdown voltage of the device while eliminating the snapback phenomenon of the IGBT conduction characteristic, reduce the forward conduction voltage drop of the device, and improve the turn-off speed, reduce the turn-off loss, and at the same time, improve the reverse recovery characteristics of the integrated freewheeling diode.

Description

Technical field [0001] The present invention belongs to the technical field of power semiconductor devices, and more particularly to a retrore-optical transverse insulated gate bipolar transistor (RC-LIGBT) device based on SiLicon Oninsulator technology and its preparation method thereof. Background technique [0002] Semiconductor power devices are basic electronic components for energy control and conversion, and the continuous development of power electronics has developed a wide range of applications for semiconductor power devices. MOS semiconductor power devices marked with IGBT, VDMOS, and COOLMOS is the mainstream of today's power electronic field devices, where the most representative semiconductor power devices are IGBT. [0003] IGBT (insulated gate bipolar transistor, insulated gate bipolar transistor) is a voltage controlled MOS / BJT composite device. From the structure, the structure of the IGBT is extremely similar to VDMOS, just Ni VDMOS N + The substrate is adju...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/739H01L29/06H01L21/331
CPCH01L29/0623H01L29/66325H01L29/7394
Inventor 张金平赵倩刘竞秀李泽宏任敏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA