Method of forming semiconductor device

Abstract

Disclosed is a formation method of a semiconductor device. The formation method comprises the steps of providing a semiconductor substrate, wherein the semiconductor substrate comprises a core regionand an edge region, and the core region and the edge region have fin parts on the semiconductor substrate; injecting threshold value ions to the fin part of the core region; forming an isolation structure on the semiconductor substrate in the core region and the edge region, wherein the isolation structure covers a part of the side walls of the fin parts; after the fin part in the core region is injected with the threshold value ions, forming a first pseudo-gate oxide layer on the surface of the isolation structure and the surfaces of the fin parts by adopting a deposition process; and after the first pseudo-gate oxide layer on the edge region is removed, forming a second pseudo-gate oxide layer on the exposed surface of the fin part on the edge region by adopting an oxidization process. By virtue of the formation method of the semiconductor device, the electrical performance of the semiconductor device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor device. Background technique [0002] MOS (Metal-Oxide-Semiconductor) transistor is one of the most important elements in modern integrated circuits. The basic structure of MOS transistors includes: a semiconductor substrate; a gate structure located on the surface of the semiconductor substrate, and the gate structure includes : a gate dielectric layer on the surface of the semiconductor substrate and a gate electrode layer on the surface of the gate dielectric layer; source and drain doped regions in the semiconductor substrate on both sides of the gate structure. [0003] With the development of semiconductor technology, the ability of the traditional planar MOS transistor to control the channel current becomes weaker, resulting in serious leakage current. Fin Field Effect Transistor (Fin FET) is an emerging multi-gate device, wh...

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Problems solved by technology

[0005] However, the electrical performance of semiconductor devices formed by fin field effect transistors in the prior art is poor

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