Semiconductor structures and methods of forming them

Abstract

The present invention provides a semiconductor structure and a method for forming the same, wherein the structure includes: a substrate, and the substrate includes: a device region and a first connection region and a second connection region respectively located on both sides of the device region; A first fin on the substrate in the connection area and a second fin on the substrate in the second connection area, the first fin and the second fin are arranged in parallel, and the first fin and the second fin are The extending direction is perpendicular to the arrangement direction of the first fins and the second fins; the doping regions located in the device region, the substrate of the first connection region and the second connection region, and the first fins and the second fins; A first plug spanning a portion of the top of the first fin; a second plug spanning a portion of the top of the second fin. When the semiconductor structure is in use, the cross-sectional area of ​​the channel through which the current flows is relatively large, therefore, the contact resistance between the first fin and the second fin and the doped region is small, which can improve the semiconductor structure. structural performance.

Description

technical field [0001] The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor structure and a forming method thereof. Background technique [0002] With the improvement of the integration level of semiconductor devices, the critical dimensions of transistors are continuously reduced. The reduction of critical dimensions means that more transistors can be arranged on a chip, thereby improving the performance of devices. The resistive element is an important component on the chip. [0003] The resistive element can be formed with a semiconductor layer comprising resistively doped regions. There are doping ions in the resistance doping region, and the resistance value of the resistance element can be adjusted by adjusting the concentration of the doping ions. Both ends of the doped region can be electrically connected to an external circuit through an electrical interconnection structure. [0004] There is a contact resi...

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Problems solved by technology

[0004] There is a contact resistance between the doped region and the electrical interconnection structure. If the contact resistance is too large, it will easily cause more heat generated by the resistance element, thereby causing a self-heating effect. In addition, if the contact resistance is too large, it will easily cause the The resistance value of the resistance element is too high, which easily affects the performance of the resistance element

[0005] However, the contact resistance of the existing resistive elements is large, and the performance of the resistive elements is poor

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