High voltage pulse thyristor switching device with thermal management

A high-voltage pulse and switching device technology, applied in thyristors, semiconductor devices, electric solid devices, etc., can solve the problems of large cooling system, small time scale, large energy consumption of cooling system, etc., to strengthen cooling effect and reduce heat conduction. Thermal resistance, the effect of increasing the heat exchange area

A high-voltage pulse and switching device technology, applied in thyristors, semiconductor devices, electric solid devices, etc., can solve the problems of large cooling system, small time scale, large energy consumption of cooling system, etc., to strengthen cooling effect and reduce heat conduction. Thermal resistance, the effect of increasing the heat exchange area

CN107818951BActive Publication Date: 2019-08-09南京帕尔斯电气科技有限公司
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  • High voltage pulse thyristor switching device with thermal management
  • High voltage pulse thyristor switching device with thermal management
  • High voltage pulse thyristor switching device with thermal management

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Embodiment Construction

[0035] Such as figure 1 , 2 As shown, the high-voltage pulse thyristor switching device with heat management of the present invention includes a ceramic case 1 with a cylindrical inner cavity, a cathode base bottom plate 16 that is crimped and sealed on the upper end surface of the ceramic case 1 through a gasket 18, and a cathode base plate 16 that is sealed by welding The anode base bottom plate 3 sealed on the lower end surface of the ceramic shell 1;

[0036] It also includes an anode clamp 4 and a cathode clamp 13, the cathode clamp 13 is installed on the cathode base bottom plate 16, and the anode clamp 4 is installed under the anode base bottom plate 3; the cathode clamp 13 and the anode clamp 4 pass through the circumference Fasten and clamp the sealed cavity formed by the ceramic casing 1, the cathode base base plate 16 and the anode base base plate 3 to multiple groups of screw rods 5, nuts 6 and washers 7 that are uniformly arranged;

[0037] The anode heat dissip...

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Abstract

The invention discloses a high-voltage pulse thyristor switching device with thermal management, which comprises a ceramic tube shell (1) with the inner cavity being cylindrical, a cathode base bottomplate (16) and an anode base bottom plate (3), and is characterized in that the a closed cavity formed by the ceramic tube shell (1), the cathode base bottom plate (16) and the anode base bottom plate (3) is filled with a cooling medium (19) and is directly contacted with an anode heat dissipation base (2), a first molybdenum clamping block (8), a silicon valve plate (9), an insulating sleeve (10), a second molybdenum clamping block (11), a cathode heat dissipation base (12) and a gate assembly (15) which are arranged in the closed cavity to perform heat exchange. The high-voltage pulse thyristor switching device with thermal management adapts to cooling requirements under the pulse power load, and is good in cooling effect, compact in structure of a cooling system and high in expansibility.

Description

technical field [0001] The invention belongs to the technical field of power electronics and pulse power source devices, in particular to a high-voltage pulse thyristor switching device with thermal management and good cooling effect and small volume. Background technique [0002] High-voltage pulse thyristor switching devices are the core components of pulse power systems. They are widely used for their powerful power levels and large overload capabilities, and have become the focus of continuous research in the field of pulse power technology. [0003] As the control link of the pulse power adjustment system, the working current of the high-voltage pulse thyristor switching device can be as high as hundreds of kiloamperes. The switching loss during the switching process and the ohmic loss during the conduction process will increase the junction temperature of the device, and the excessive The junction temperature will change the operating characteristics of the device and ...

Claims

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Application Information

Patent Timeline
09 Aug 2019
Publication
CN107818951B
IPC
H01L23/10; H01L23/367; H01L23/427; H01L23/473; H01L29/74
CPC
H01L23/10; H01L23/3672; H01L23/427; H01L23/473; H01L29/74
Inventors
崔艳丽; 石晓晶