Square cylindrical gate embedded U-shaped channel field effect transistor and manufacturing method thereof

Abstract

The invention relates to a highly integrated square cylindrical gate embedded U-shaped channel field effect transistor and a manufacturing method thereof. Only an insulating medium requires to be filled in the groove formed by U-shaped monocrystalline silicon to realize mutual isolation of vertical channels of the two sides. Metal material or polysilicon material for generating a gate electrode does not need to be introduced into the groove, and the internal structure of the groove is relatively simple so that the highly integrated metal oxide semiconductor field effect transistor of which thelength of the physical gate electrode is only one nanometer in the conventional sense, i.e. the distance between the source electrode and the drain electrode is only one nanometer, can be realized. The square cylindrical gate is adopted, and the control capacity of the gate electrode for the U-shaped monocrystalline silicon channel can be guaranteed without introducing the gate electrode into thegroove formed by the U-shaped monocrystalline silicon so that the degree of integration can be enhanced and the control capacity of the gate electrode for the channel can also be guaranteed. Therefore, the square cylindrical gate embedded U-shaped channel field effect transistor and the manufacturing method thereof are suitable for popularization and application.

Description

Technical field [0001] The invention belongs to the field of ultra-large-scale integrated circuit manufacturing, and specifically relates to a highly integrated square cylindrical gate embedded U-shaped channel field effect transistor suitable for ultra-high integration integrated circuit manufacturing and a manufacturing method thereof. Background technique [0002] With the continuous reduction of the size of the basic unit MOSFETs of integrated circuits, the distance between the source electrode and the drain electrode has shrunk to several tens of nanometers. On the one hand, the shortening of the channel leads to the weakening of the control ability of the gate electrode and the subthreshold swing becomes larger , Leakage current increases, static power consumption increases, and the drain electrode voltage reduces the potential barrier, which leads to the drift of the threshold voltage and the significant drop in resistance to breakdown. In order to improve the gate electro...

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Problems solved by technology

[0004] In order to solve the problem that the integration level is difficult to further improve due to the complex internal structure of the groove of the U-shaped channel field effect transistor proposed by the inventor and to simplify the production process steps, the present invention proposes a highly integrated square cylindrical gate embedded with a U-shaped channel field Effect transistor and manufacturing method thereof

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