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Ultrathin THz thin film circuit processing method with local metal support and thin film circuit

A thin-film circuit and metal support technology, which is applied in the direction of circuits, electrical components, and electric solid devices, can solve the problems of difficult clamping in precision assembly operations, poor mechanical strength of circuits, and poor mechanical strength of thin-film circuits, so as to meet the requirements of precision assembly operations. demand, ensure processing accuracy, and improve the effect of mechanical strength

Active Publication Date: 2018-03-30
THE 41ST INST OF CHINA ELECTRONICS TECH GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the continuous reduction of the thickness of the thin film circuit substrate, the mechanical strength of the thin film circuit processed by the back thinning process will become worse and worse, which will bring problems such as difficult operation and clamping and fragile circuits to subsequent precision assembly. For thin-film circuits with a dielectric thickness less than 30 μm, the current common assembly methods have been unable to achieve assembly
[0007] To sum up, in the prior art, there is still no effective solution to the problems of ultra-thin THz thin-film circuits due to the thin substrate thickness and poor mechanical strength of the circuit, the difficulty in clamping and clamping of precision assembly operations, and the fragile circuit.

Method used

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  • Ultrathin THz thin film circuit processing method with local metal support and thin film circuit
  • Ultrathin THz thin film circuit processing method with local metal support and thin film circuit
  • Ultrathin THz thin film circuit processing method with local metal support and thin film circuit

Examples

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Embodiment 1

[0066] Specifically, taking the fabricated medium as polyimide, the first substrate as quartz, the second substrate as copper plate, and the locally reinforced metal support layer as the locally reinforced metal copper support layer as an example:

[0067] Step 1: On the first substrate with an ultra-thin dielectric, use a thin film process to make a circuit pattern to form a THz thin film circuit; wherein, in this step, polyimide is selected as the medium, and the quartz substrate is used as the first substrate The bottom, the selected quartz substrate should have a good surface finish and flatness, the thickness of the quartz is 0.254mm, and the size is 50mm×50mm;

[0068] A polyimide film is formed on a quartz substrate by spin coating;

[0069] Select 305IIB type polyimide (PI) glue, spread the glue at a speed of 500 rpm for 3 to 5 seconds, spread the glue at 1000 rpm for 25 seconds, and spread the glue at a thickness of about 10 μm;

[0070] After gluing, the polyimide f...

Embodiment 2

[0104] Specifically, taking the dielectric silicon dioxide produced, the first substrate is aluminum, the second substrate is stainless steel, and the locally reinforced metal support layer is metal gold as an example:

[0105] Step 1: On the first substrate with an ultra-thin dielectric, a circuit pattern is made by a thin film process to form a THz thin film circuit;

[0106]Among them, in this step, silicon dioxide is selected as the medium, and the aluminum plate is used as the first substrate. The selected aluminum plate substrate must have good surface finish and flatness, the thickness of the aluminum plate is 0.5mm, and the size is 60mm×60mm;

[0107] Using the method of chemical vapor deposition to form a silicon dioxide dielectric film on the aluminum plate substrate;

[0108] The thickness of the silicon dioxide dielectric is about 5 μm;

[0109] In said step 1, the technological process of making circuit graphics by thin film technology is:

[0110] Vacuum coatin...

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Abstract

The invention discloses an ultrathin THz thin film circuit processing method with local metal support and a thin film circuit. The ultrathin THz thin film circuit processing method with local metal support comprises the steps of (1) fabricating a circuit pattern on a first substrate with an ultrathin medium by employing a thin film process so as to form a THz thin film circuit; (2) pasting a frontsurface of the THz thin film circuit onto a second substrate, and removing the first substrate; (3) removing a back surface of the THz thin film circuit on the first substrate, and fabricating a local reinforcement metal support layer; and (4) performing dividing and cutting operation on the THz thin film circuit, and separating the THz thin film circuit from the second substrate. By the ultrathin THz thin film circuit processing method, the mechanical strength of the ultrathin THz thin film circuit is improved, and the precision assembly operation demand is satisfied.

Description

technical field [0001] The invention belongs to the field of thin film circuit processing, in particular to an ultra-thin THz thin film circuit processing method with local metal support and the thin film circuit. Background technique [0002] The frequency range of terahertz (THz for short) in the electromagnetic spectrum is roughly 0.1THz-10THz. THz waves have unique characteristics of transient, broadband, coherence and low energy. In recent years, THz waves have attracted more and more attention from all over the world due to their unique performance and wide potential application value. With the deepening of applied research and the continuous expansion of interdisciplinary fields, the research and application of THz waves will usher in A booming stage. [0003] At present, terahertz modules mainly use waveguides or ultra-thin substrate film circuit waveguide structures. In order to improve the performance of high-frequency microwaves, low dielectric constant substra...

Claims

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Application Information

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IPC IPC(8): H01L21/70H01L27/01
CPCH01L21/707H01L27/016
Inventor 许延峰王进马子腾
Owner THE 41ST INST OF CHINA ELECTRONICS TECH GRP
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