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Method for preparing polycrystalline silicon thin film by infrared laser

A technology of polysilicon thin film and amorphous silicon thin film, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problem of small grain size and achieve the effect of less defects and good crystallization effect

Inactive Publication Date: 2018-04-13
NANJING XINCHUANGLI PHOTOELECTRIC SCI & TECH
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Problems solved by technology

[0004] The purpose of the present invention is to overcome the shortcoming of the smaller grain size of the polysilicon thin film in the existing preparation technology, and provide a method for preparing a polysilicon thin film with an infrared laser

Method used

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  • Method for preparing polycrystalline silicon thin film by infrared laser
  • Method for preparing polycrystalline silicon thin film by infrared laser
  • Method for preparing polycrystalline silicon thin film by infrared laser

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Embodiment 1

[0029] The embodiment of the present invention provides a method for preparing a polysilicon thin film with an infrared laser, such as figure 1 As shown, it specifically includes the following steps:

[0030] 110 sequentially deposit silicon oxide, silicon nitride, and silicon oxide thin films on the glass substrate as a buffer layer.

[0031] 120 depositing an amorphous silicon thin film on the buffer layer.

[0032] 130 scans the amorphous silicon film with a continuous laser.

[0033] Among them, such as figure 2 The demonstrated substrate uses 3.3mm thick borosilicate glass, which has excellent thermal and optical properties.

[0034] like image 3 As shown, 1: 80nm SiOx film, 2: 70nm SiNx film, 3: 15nm SiOx film are deposited sequentially on the glass substrate as a buffer layer. The buffer layer can be deposited by PECVD (Plasma Enhanced Chemical Vapor Deposition) plasma enhanced chemical vapor deposition Method deposition. The buffer layer composed of these three...

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Abstract

The invention belongs to the field of polycrystalline silicon, and specifically relates to a method for preparing a polycrystalline silicon thin film by an infrared laser. The method comprises the steps of depositing silicon oxide, silicon nitride and the like on a glass substrate to form a buffer layer, depositing an amorphous silicon thin film on the buffer layer, and scanning the amorphous silicon thin film by infrared continuous laser so as to acquire a high-quality polycrystalline silicon thin film with a large grain size and fewer defects.

Description

technical field [0001] The invention belongs to the field of polysilicon, and in particular relates to a method for preparing a polysilicon film by an infrared laser. Background technique [0002] At present, the preparation methods of polysilicon thin films include direct method and indirect method. The direct method, such as the chemical deposition method, is simple and fast, but the obtained polysilicon grain size is too small, which affects the performance of the device. In order to obtain higher-quality polysilicon films, polysilicon films can also be prepared by indirect methods, that is, firstly prepare amorphous silicon films, and then crystallize the amorphous silicon films to obtain polysilicon films. At present, the crystallization methods include high-temperature furnace annealing, rapid Thermal annealing, metal-induced crystallization, and laser crystallization, etc. The conventional high-temperature furnace annealing method has high temperature, high energy c...

Claims

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Application Information

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IPC IPC(8): H01L21/02
Inventor 郭小伟徐文龙杨承李绍荣邹渝
Owner NANJING XINCHUANGLI PHOTOELECTRIC SCI & TECH
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