Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Airtight wafer level packaging structure and process of surface acoustic wave device

A surface acoustic wave device and wafer-level packaging technology, which is applied to electrical components, impedance networks, etc., can solve the problems of increasing size, achieve the effects of improved air tightness, high shear strength, and improved processing efficiency

Pending Publication Date: 2018-04-17
CETC CHIPS TECH GRP CO LTD
View PDF0 Cites 16 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the internal leads need to be brought out of the package, the size of the package needs to be increased

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Airtight wafer level packaging structure and process of surface acoustic wave device
  • Airtight wafer level packaging structure and process of surface acoustic wave device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The present invention will be described in detail below in conjunction with the accompanying drawings and specific embodiments.

[0032] The packaging technology is applied in the technical field of packaging of high-reliability surface acoustic wave devices. Specifically, the functional chip of the surface acoustic wave device and the capping wafer are bonded together by wafer packaging technology to form an airtight seal.

[0033] The structure of the surface acoustic wave device targeted by this packaging process is as follows: figure 2 As shown, it can be seen from the figure that the surface acoustic wave device includes a functional chip 1 and a capping wafer 2, a circle of bonding layer metal 3 is plated on the periphery of the working surface of the functional chip 1, and the capping wafer 2 A circle of bonding layer metal 3 is also plated on the corresponding position of each chip bonding layer metal, and the functional chip 1 and the capping wafer 2 are bonde...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses an airtight wafer level packaging structure and process of a surface acoustic wave device. A circle of bonding layer metal is plated on the periphery of a working surface of afunctional chip, a circle of bonding layer metal is plated on a position corresponding to each piece of chip bonding layer metal on a sealing cover wafer, and the functional chip and the sealing coverwafer are correspondingly combined together through gold-gold bonding or eutectic bonding; an external circuit wiring circuit and an external electrode are arranged on one surface of the sealing cover wafer deviating from the working surface of the functional chip; an external welding ball is made on the external electrode; and a conduction hole is formed in the sealing cover wafer to electrically connect the working surface circuit of the functional chip with the external welding ball through the conduction hole and the external electrode in sequence. By adoption of the airtight wafer levelpackaging structure and process, high chip shear strength, good heat dissipation performance, and airtight package of the wafer level (WLP) surface acoustic wave device with controllable internal atmosphere are achieved, and the reliability is high.

Description

technical field [0001] The invention relates to a surface acoustic wave device, in particular to an airtight wafer-level packaging structure and process for a surface acoustic wave device, and belongs to the technical field of surface acoustic wave device packaging. Background technique [0002] Surface acoustic wave (Surface Acoustic Wave, SAW) device is a frequency-selective device made of surface acoustic wave effect and resonance characteristics. Surface acoustic wave devices, especially surface acoustic wave filters (SurfaceAcoustic Wave Filter, SAWF) have small size, light weight, good consistency, high reliability, real-time signal processing, analog / digital compatibility, and anti-electromagnetic interference performance The advantages of good, low loss and good frequency selectivity have always been key devices in mobile communications and automotive electronics. With the continuous development of technology in the field of mobile communication and other fields, em...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/10
CPCH03H9/1064
Inventor 米佳朱勇冷俊林陶毅
Owner CETC CHIPS TECH GRP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products