Sapphire wafer polishing method based on fixed abrasive tool containing neodymium compound and soft abrasive materials

Abstract

The invention discloses a sapphire wafer polishing method based on fixed abrasive tool containing neodymium compounds and soft abrasive materials. The method comprises the steps that 1), the fixed abrasive tool containing the neodymium compounds and the soft abrasive materials is prepared by comprising, 40%-60% of nano silicon dioxide, 20%-40% of a binding agent, 10%-15% of a curing agent, 5%-10%of a neodymium compound, and the balance deionized water; 2), the prepared raw materials undergo hot-press forming in a mould, heat curing is completed after demolding is carried out, and the upper end surface and the lower end surface of the formed abrasive tool are trimmed; 3), the abrasive tool is arranged on a polishing machine upper disc, a sapphire wafer to be machined is placed on a polishing machine lower disc capable of rotating and is fixed by a clamp, then a polishing machine is started, a water-based cooling liquid is injected between the upper disc and the lower disc, the neodymium compounds and the silicon dioxide abrasive particles on the abrasive tool scratch the sapphire surface and the solid-phase reaction is carried out, so that the sapphire wafer is polished. Accordingto the method, the removal rate of the sapphire wafer can be improved, the roughness can be reduced, the machining efficiency can be improved, and the production cost can be reduced.

Description

technical field [0001] The invention relates to a polishing method, in particular to a high-efficiency and high-quality polishing method for sapphire wafers. Background technique [0002] Sapphire, also known as white sapphire, has the same optical and mechanical properties as natural gemstones, has good thermal properties, excellent electrical and dielectric properties, and is resistant to chemical corrosion. It has a high transmittance to infrared rays and has great Good wear resistance, hardness second only to diamond, Mohs grade 9, still has good stability at high temperature, melting point is 2030 degrees Celsius, is widely used in industry, national defense, scientific research and other fields, more and more It is used as a manufacturing material for parts in high-tech fields such as solid-state lasers, infrared windows, substrates for semiconductor chips, and precision wear-resistant bearings, such as infrared windows for ground-to-ground and surface-to-air missiles,...

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to overcome the shortcomings of low polishing efficiency and high cost of existing sapphire wafers. The present invention provides a

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