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Perovskite type quantum dot film

A perovskite-type, quantum dot film technology, applied in coatings, instruments, optics, etc., can solve problems such as high production costs, edge quantum dot failure, quantum dot luminous efficiency quenching, etc., achieve long service life, prevent The effect of failure

Inactive Publication Date: 2018-04-27
HEFEI LUCKY SCI & TECH IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The quantum dot film of this type of structure has the following problems: (a) the production cost is high, which is not conducive to market promotion; (b) this type of quantum dot is a II-VI group CdSe material, and the preparation process is complicated; (c) the bonding glue Generally, acrylate optical adhesives are used. The surface of this type of optical adhesive material is easy to absorb water vapor, which has a quenching effect on the luminous efficiency of quantum dots. As the use time increases, edge quantum dots will fail and affect the quantum dot film. stability

Method used

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  • Perovskite type quantum dot film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] (1) Quantum dot layer coating solution is prepared according to the formula of table 1, wherein polymer component and ratio are polyvinylidene fluoride: polyvinyl acetate=1:1;

[0036] (2) Coating the quantum dot layer coating solution on the transparent substrate, heating and curing at 70°C, and forming a film for later use;

[0037] (3) coating a barrier layer on the quantum dot layer obtained in the previous step, the material of the barrier layer is a silicon oxide compound (SiO x ), with a thickness of 0.5 μm;

[0038] (4) Finally, a layer of anti-adhesive layer is coated on the barrier layer. The anti-adhesive layer is coated with polystyrene particles, polyurethane acrylic resin, and ionic liquid antistatic agent, and the particle size of the diffusion particles is 5 μm.

[0039] Table 1 Embodiment 1 Quantum dot layer coating solution formula

[0040] Recipe 1

[0041] In this embodiment, the other side of the transparent substrate is coated with a di...

Embodiment 2

[0043] (1) Quantum dot layer coating solution is prepared according to the formula of table 2, wherein high molecular polymer component and ratio are polyvinylidene fluoride: polyvinyl acetate=1:2;

[0044] (2) Coating the quantum dot layer coating solution on the transparent substrate, heating and curing at 70°C, and forming a film for later use;

[0045] (3) coating a barrier layer on the quantum dot layer obtained in the previous step, the material of the barrier layer is a silicon oxide compound (SiO x ), with a thickness of 0.6 μm;

[0046] (4) Finally, a layer of anti-adhesive layer is coated on the barrier layer. The anti-adhesive layer is coated with polyacrylate particles, polyurethane acrylic resin, and ionic liquid antistatic agent, and the particle size of the diffusion particles is 6 μm.

[0047] Table 2 Embodiment 2 Quantum dot layer coating solution formula

[0048] Recipe 2

[0049] In this embodiment, the other side of the transparent substrate is ...

Embodiment 3

[0051] (1) Quantum dot layer coating solution is prepared according to the formula of table 3, wherein high molecular polymer component and ratio are polyvinylidene fluoride: polyvinyl acetate=1:3;

[0052] (2) Coating the quantum dot layer coating solution on the transparent substrate, heating and curing at 70°C, and forming a film for later use;

[0053] (3) coating a barrier layer on the quantum dot layer obtained in the previous step, the material of the barrier layer is a silicon oxide compound (SiO x ), with a thickness of 1 μm;

[0054] (4) Finally, a layer of anti-adhesive layer is coated on the barrier layer. The anti-adhesive layer is coated with polymethacrylate particles, polyurethane acrylic resin, and ionic liquid antistatic agent. The particle size of the diffusion particles is 10 μm.

[0055] Table 3 Embodiment 3 Quantum dot layer coating solution formula

[0056] Recipe 3

[0057] In this embodiment, the other side of the transparent substrate is ...

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Abstract

The invention discloses a perovskite type quantum dot film. The perovskite type quantum dot film comprises a transparent base material, a quantum dot layer with which one surface of the transparent base material layer is coated, a blocking layer with which the surface of the quantum dot layer is coated, and an anti-binding layer on the surface of the blocking layer, wherein the quantum dot layer is cured after being coated with 0.1-0.5 part of perovskite type quantum dot particles, 5-25 parts of high-molecular polymer and 100-200 parts of solvent. The brightness and the color gamut of the perovskite type quantum dot film do not easily get reduced, and the perovskite type quantum dot film has good optical features and long service life.

Description

technical field [0001] The invention relates to the technical field of quantum dot films, in particular to a perovskite quantum dot film applied to a backlight module. Background technique [0002] The development of LCD products is undoubtedly developing towards the direction of ultra-thin, brighter and richer colors. Although LCD display technology has many advantages, a very critical disadvantage is its low color gamut, that is, the range of colors that can be presented is very limited. The maximum color gamut of an ordinary LCD display is only 72% NTSC. Due to its unique properties such as narrow luminous peak, high luminous efficiency, luminous color can cover the entire visible range from blue light to red light, and high color purity, quantum dot films made of quantum dots have high color rendering and are widely used To LCD, the NTSC color gamut can be increased by 30%, up to 110%. [0003] There are several ways to produce white light for LEDs used in backlight mo...

Claims

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Application Information

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IPC IPC(8): G02F1/13357C09D127/16C09D131/04C09D101/12C09D169/00C09D5/22
CPCC09D5/22C09D101/12C09D127/16C09D131/04C09D169/00G02F1/1336G02F1/133614C08L31/04C08L27/16
Inventor 黄永华王增敏王辉李彩翠刘红妹张运波郑宇翔
Owner HEFEI LUCKY SCI & TECH IND
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