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Thermopile infrared detector and preparation method thereof

Pending Publication Date: 2018-05-04
南京方旭智芯微电子科技有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] Traditional thermopile devices have low infrared absorption at the hot end

Method used

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  • Thermopile infrared detector and preparation method thereof
  • Thermopile infrared detector and preparation method thereof
  • Thermopile infrared detector and preparation method thereof

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Embodiment Construction

[0036] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments It is a part of embodiments of the present invention, but not all embodiments. The components of the embodiments of the invention generally described and illustrated in the figures herein may be arranged and designed in a variety of different configurations.

[0037] Accordingly, the following detailed description of the embodiments of the invention provided in the accompanying drawings is not intended to limit the scope of the claimed invention, but merely represents selected embodiments of the invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art wi...

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Abstract

The invention provides a thermopile infrared detector and a preparation method thereof, and relates to the technical field of thermopile infrared detectors. The thermopile infrared detector includes aprocessed silicon substrate, an infrared absorption layer disposed on the processed silicon substrate, and a back cavity which is formed by patterning and etching the middle portion of the processedsilicon substrate and is provided with a downward opening. A metal reflective layer is disposed in the back cavity. A cavity is defined by the processed silicon substrate, the metal reflective layer and the infrared absorption layer and is namely an optical resonant cavity. Infrared rays are focused by a lens to the infrared absorption layer, and infrared rays reaching the infrared absorption layer and infrared rays reflected by the metal reflective layer form an about 1 / 2 optical path difference in the infrared absorption layer, thereby forming a standing wave effect, so that the infrared rays focused to the hot end infrared absorption layer are absorbed as much as possible. The infrared absorption rate is greatly increased, thereby increasing the response rate and detection rate of the thermopile infrared detector are increased, and the noise equivalent temperature difference of the thermopile infrared detector is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of thermopile infrared detectors, in particular to a thermopile infrared detector and a preparation method thereof. Background technique [0002] Non-contact infrared temperature measurement technology can quickly and easily measure the surface temperature of objects, and can quickly measure temperature readings without mechanical contact with the measured object, and can reliably measure hot, dangerous or difficult-to-reach objects without contamination or damage the measured object. Infrared temperature measurement has the advantages of fast response time, non-contact, safe use and long service life. It plays an important role in product quality control and monitoring, equipment online fault diagnosis, safety protection and energy saving. [0003] All objects with a temperature higher than absolute zero are constantly emitting infrared radiation energy to the surrounding space. The infrared radiation cha...

Claims

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Application Information

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IPC IPC(8): G01J5/12G01J5/08
CPCG01J5/0803G01J5/12
Inventor 马清杰吴多武许正一
Owner 南京方旭智芯微电子科技有限公司
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