A self-aligned quadruple patterning technique

A self-alignment and graphics technology, which is applied in semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of small lithography window of self-alignment double patterning technology, difficulty in improving accuracy and consistency of critical dimensions, etc. Achieve the effect of increasing density, excellent filling performance and ensuring precision

Active Publication Date: 2020-04-10
YANGTZE MEMORY TECH CO LTD
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Problems solved by technology

[0012] However, the self-aligned double patterning technology (SADP) has some problems. First, it can only achieve 1 / 2 minimum size (1 / 2Pitch) photolithographic pattern. If you want to further reduce the minimum size to meet higher density The requirements of semiconductor integrated circuits need to rely on the development of more advanced lithography technology; secondly, the lithography window (Litho Windows) of the current self-aligned double patterning technology (SADP) is small, and it is difficult to improve the accuracy to ensure the critical dimension (CD) Consistency

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  • A self-aligned quadruple patterning technique
  • A self-aligned quadruple patterning technique
  • A self-aligned quadruple patterning technique

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Embodiment Construction

[0045] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure, and to fully convey the scope of the present disclosure to those skilled in the art.

[0046] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention in unnecessary detail. It should be recognized that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as chan...

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Abstract

The invention provides a self-aligned quadruple pattern technology (SAQP for short). According to the SAQP of the invention, through the secondary deposition process of side wall materials, on the premise that the current photoetching technology is not changed at all (that is, the size of a photoetching window is kept unchanged), the minimum size of 1 / 4 pitch can be obtained. Compared with the original self-aligned double-pattern technology (SRDP) wherein the minimum size of only 1 / 2 pitch can be obtained, the performance of the minimum size is greatly improved. As a result, the density of a semiconductor integrated circuit can be greatly improved.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a chip back-end metal process technology, in particular to a self-aligned quadruple pattern technology (Self-Aligned Quadruple Pattern, referred to as SAQP), such as the preparation process for metal interconnection structures In process. Background technique [0002] The manufacture of semiconductor devices, such as 3D NAND (3D NAND) flash memory, must go through a series of process flows, which include various semiconductor device process steps such as etching and photolithography. The traditional manufacturing process will include 300-400 steps, each of which will affect the final shape of each device on the semiconductor chip, that is, affect the feature size of the device, thereby affecting various electrical characteristics of the device. In the traditional process flow, it can be divided into two main sub-processes, which are Front End of Line (FEOL for ...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/027H01L21/033H01L23/538
CPCH01L21/027H01L21/0337H01L23/538
Inventor 毛晓明苏林高晶
Owner YANGTZE MEMORY TECH CO LTD
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