Preparation method and application of silver iodide/bismuth selenate composite material

A composite material, silver iodide technology, applied in catalyst activation/preparation, chemical instruments and methods, oxidation preparation of carbonyl compounds, etc., can solve problems such as uncontrollable, many steps, etc. Effect

Active Publication Date: 2018-05-11
FUZHOU UNIVERSITY
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

There are many steps in this process, and there may be some uncontrollable behavior in actual production.

Method used

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  • Preparation method and application of silver iodide/bismuth selenate composite material
  • Preparation method and application of silver iodide/bismuth selenate composite material
  • Preparation method and application of silver iodide/bismuth selenate composite material

Examples

Experimental program
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Effect test

Embodiment 1

[0023] (1) Photocatalyst Bi 2 SeO 5 Preparation: 2 mmol of bismuth oxide, 3 mmol of selenium powder and 0.5 g of sodium borohydride were mixed evenly, placed in a muffle furnace, and calcined at 500 °C for 3 h in an air atmosphere.

[0024] (2) Composite photocatalyst AgI / Bi 2 SeO 5 Preparation: AgI / Bi with a molar percentage of AgI of 0.5% was prepared by in-situ deposition method 2 SeO 5 Complex, weigh 0.40 mmol Bi 2 SeO 5 The powder was dispersed in 25 mL of deionized water, and then 10 mL of AgNO was added to the resulting solution 3 solution (containing 2 μmol AgNO 3 ); stirred in the dark for 30 min, then added 25 mL of a solution containing 2 μmol KI dropwise until the solution turned bright yellow; centrifuged, washed the precipitate with distilled water and absolute ethanol, and dried in vacuum at 60 °C for 2 h to obtain AgI / Bi 2 SeO 5 Composite precursor; the resulting precursor can be calcined at 200 ℃ for 0.5 h in a nitrogen-hydrogen mixture with a hydro...

Embodiment 2

[0026](1) Photocatalyst Bi 2 SeO 5 Preparation: 2 mmol of bismuth oxide, 3 mmol of selenium powder and 0.5 g of sodium borohydride were mixed evenly, placed in a muffle furnace, and calcined at 500 °C for 3 h in an air atmosphere.

[0027] (2) Composite photocatalyst AgI / Bi 2 SeO 5 Preparation: AgI / Bi with a molar percentage of AgI of 0.7% was prepared by in-situ deposition method 2 SeO 5 Complex, weigh 0.40 mmol Bi 2 SeO 5 The powder was dispersed in 25 mL of deionized water, and then 10 mL of AgNO was added to the resulting solution 3 solution (containing 2.8 μmol AgNO 3 ); stirred in the dark for 30 min, then added 25 mL of a solution containing 2.8 μmol KI dropwise until the solution turned bright yellow; centrifuged, washed the precipitate with distilled water and absolute ethanol, and dried in vacuum at 60 °C for 2 h to obtain AgI / Bi 2 SeO 5 Composite precursor; the resulting precursor can be calcined at 500 ℃ for 0.5 h in a nitrogen-hydrogen mixture with a hyd...

Embodiment 3

[0029] (1) Photocatalyst Bi 2 SeO 5 Preparation: 2 mmol of bismuth oxide, 3 mmol of selenium powder and 0.5 g of sodium borohydride were mixed evenly, placed in a muffle furnace, and calcined at 500 °C for 3 h in an air atmosphere.

[0030] (2) Composite photocatalyst AgI / Bi 2 SeO 5 Preparation: AgI / Bi with a molar percentage of AgI of 1% was prepared by in-situ deposition 2 SeO 5 Complex, weigh 0.40 mmol Bi 2 SeO 5 The powder was dispersed in 25 mL of deionized water, and then 10 mL of AgNO was added to the resulting solution 3 solution (containing 4 μmol AgNO 3 ); stirred in the dark for 30 min, then added 25 mL of a solution containing 4 μmol KI dropwise until the solution turned bright yellow; centrifuged, washed the precipitate with distilled water and absolute ethanol, and dried in vacuum at 60 °C for 2 h to obtain AgI / Bi 2 SeO 5 Composite precursor; the resulting precursor can be calcined at 300 ℃ for 4 h in a nitrogen-hydrogen mixture with a hydrogen content...

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Abstract

The invention discloses a preparation method and application of a silver iodide / bismuth selenate composite material. An in-situ deposition method is adopted, Bi2SeO5 powder is dispersed in deionized water at first, and then an AgNO3 solution is added into the solution above; after the mixed solution is placed in a dark place and stirred for 30 min, a KI solution is added drop by drop till the solution becomes bright yellow; centrifugal separation is conducted, precipitate is washed with distilled water and absolute ethanol separately, subjected to vacuum drying and calcined in the nitrogen-hydrogen mixed atmosphere to obtain an AgI / Bi2SeO5 composite, and granular AgI is precipitated on sheet-like Bi2SeO5. According to the preparation method and application of the silver iodide / bismuth selenate composite material, the reaction conditions are mild and easy to control, the preparation process is environmentally friendly and free of pollution, and industrial production is facilitated; theproblem is effectively solved that existing AgI particles are easily agglomerated or easily oxidized in the loading process. The prepared composite material has good photocatalytic activity, and the photodegradation and selective organic synthesis can be effectively conducted on contaminants.

Description

technical field [0001] The invention belongs to the technical field of photocatalytic composite material preparation, and in particular relates to a preparation method and application of a silver iodide / bismuth selenate composite material. Background technique [0002] Silver-based semiconductor photocatalytic materials have a relatively low bandgap and have strong sensitivity in the visible light region. At the same time, it has been found that it also has good photocatalytic activity, so it has attracted widespread attention and in-depth research, such as AgX( X=C1, Br, I), Ag 2 S, Ag@AgX (X=C1, Br, I), Ag 3 P0 4 , Ag 3 As0 4 、Ag 2 M0 4 (M=Cr, Mo, W) and so on. However, due to its instability, it is easy to decompose elemental silver when exposed to light, so it cannot be used as a separate photocatalyst. On the other hand, the recombination rate of photogenerated electron-hole pairs in silver-based semiconductor materials is relatively high, resulting in a low uti...

Claims

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Application Information

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IPC IPC(8): B01J27/057B01J27/08C02F1/30C07C45/29C07C47/54C02F101/30
CPCC02F1/30C07C45/29B01J27/0573B01J27/08B01J37/0221B01J37/08C02F2101/308C02F2305/10B01J35/19B01J35/39C07C47/54
Inventor 祝淑颖梁诗景
Owner FUZHOU UNIVERSITY
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