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P-type impurity diffusion composition, method of manufacturing semiconductor element using same, and method of manufacturing solar cell

A technology of impurity diffusion and composition, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems that the gas diffusion method cannot be applied, and achieve excellent barrier properties

Active Publication Date: 2022-03-22
TORAY IND INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For such techniques, the gas diffusion method described above cannot be applied

Method used

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  • P-type impurity diffusion composition, method of manufacturing semiconductor element using same, and method of manufacturing solar cell
  • P-type impurity diffusion composition, method of manufacturing semiconductor element using same, and method of manufacturing solar cell
  • P-type impurity diffusion composition, method of manufacturing semiconductor element using same, and method of manufacturing solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0212] (1) Synthesis of polysiloxane solution

[0213] 164.93 g (1.21 mol) of KBM-13 (manufactured by Shin-Etsu Chemical Co., Ltd., MeTMS), 204.07 g (1.21 mol) of KBM-103 (manufactured by Shin-Etsu Chemical Co., Ltd., PhTMS), and 363.03 g were added to a 1000 mL three-necked bottle. γ-BL was added over 30 minutes, while stirring at 40° C., an aqueous formic acid solution in which 0.1.215 g of formic acid was dissolved in 130.76 g of water. After completion of the dropwise addition, the mixture was stirred at 40° C. for 1 hour, then heated up to 70° C., and stirred for 30 minutes. Thereafter, the temperature of the oil bath was raised to 115°C. One hour after the start of temperature rise, the internal temperature of the solution reached 100° C., and it was heated and stirred for 1 hour thereafter (internal temperature: 100° C. to 110° C.). The resulting solution was cooled in an ice bath to obtain a polysiloxane solution A (PhTMS (50 mol%) / MeTMS (50 mol%), ie a substance hav...

Embodiment 2

[0220] The composition of the polysiloxane is such that n:m=90:10 in the general formula (1), and the feed ratio of the raw materials is PhTMS (90 mol%) / MeTMS (10 mol%). In the same manner as in Example 1, impurity-diffusing composition B was obtained. Using the obtained impurity-diffusing composition B, the peelability, sheet resistance, diffusion uniformity, and barrier properties were measured, and as shown in Table 2, all showed good results. In addition, the weight average molecular weight (Mw) of the polysiloxane in the polysiloxane solution used was 2300.

Embodiment 3

[0222] The composition of the polysiloxane is n:m=80:20 in the general formula (1), and the feed ratio of the raw materials is PhTMS (80 mol%) / MeTMS (20 mol%). In the same manner as Example 1, impurity-diffusing composition C was obtained. Using the obtained impurity-diffusing composition C, the peelability, sheet resistance, diffusion uniformity, and barrier properties were measured, and as shown in Table 2, all showed good results. In addition, the weight average molecular weight (Mw) of the polysiloxane in the polysiloxane solution used was 2500.

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Abstract

An object of the present invention is to provide a p-type impurity diffusion composition having excellent diffusibility into a semiconductor substrate and sufficient barrier properties to n-type impurities. In order to achieve the above objects, the present invention has the following configurations. That is, a p-type impurity-diffusing composition containing (A) polysiloxane and (B) a p-type impurity-diffusing component having Si-O-B bonds.

Description

technical field [0001] The present invention relates to a p-type impurity diffusion composition for diffusing impurities in a semiconductor substrate, a method of manufacturing a semiconductor element using the same, and a method of manufacturing a solar cell. Background technique [0002] Conventionally, as a method of forming a p-type or n-type impurity diffusion layer in a semiconductor substrate, the following method is known: using boron tribromide (BBr 3 ) as a p-type impurity diffusion component, phosphorus oxychloride (POCl 3 ) as n-type impurity diffusion components each independently perform gas diffusion. However, in recent years, in the manufacture of solar cells, in order to improve production efficiency and the like, a technique of simultaneously diffusing p-type impurity diffusion components and n-type impurity diffusion components into a semiconductor substrate to form p-type and n-type impurity diffusion layers is required. To such a technique, the above-m...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/225H01L31/18
CPCH01L21/225H01L31/18Y02E10/549Y02P70/50Y02E10/50H01L2031/0344H10K85/40
Inventor 北田刚稻叶智雄池上由洋
Owner TORAY IND INC