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Laminated white light emitting diode based on quantum dot electroluminescence and preparation method thereof

A technology of light-emitting diodes and electroluminescence, applied in circuits, electrical components, electro-solid devices, etc., can solve the problems of low efficiency and poor spectral stability of white light devices

Inactive Publication Date: 2018-05-15
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

White light devices based on this blended light-emitting layer have low efficiency and poor spectral stability

Method used

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  • Laminated white light emitting diode based on quantum dot electroluminescence and preparation method thereof
  • Laminated white light emitting diode based on quantum dot electroluminescence and preparation method thereof
  • Laminated white light emitting diode based on quantum dot electroluminescence and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A stacked white light-emitting diode based on quantum dot electroluminescence, such as figure 1 As shown, it is composed of an anode, a cathode, and red, green, and blue light-emitting units stacked between the anode and the cathode. The arrangement order of the red, green and blue light-emitting units can be changed arbitrarily, and can be arranged according to red, green and blue from bottom to top, or can be arranged in green, blue and red, blue, red and green or other ways.

[0036] The two adjacent functional layers between two adjacent light-emitting units are connecting layers, and the connecting layer is composed of an electron transport layer in the lower light-emitting unit and a hole injection layer in the upper light-emitting unit.

[0037] The hole injection layer as the connection layer is a polyoxometalate film, and the electron transport layer as the connection layer is an n-type metal oxide nano particle film. The polyoxometalate is at least one of mol...

Embodiment 2

[0048] The present invention will be further described with a specific example.

[0049] The device structure of this embodiment is: anode (ITO) / hole injection layer (PEDOT:PSS) / hole transport layer (HTL) / blue light emitting layer (B-QD) / electron transport layer (ZnO) / hole injection layer (phosphomolybdic acid-PMA) / hole transport layer (HTL) / green light emitting layer (G-QD) / electron transport layer (ZnO) / hole injection layer (phosphomolybdic acid-PMA) / hole transport layer (HTL) / red light-emitting layer (R-QD) / electron transport layer (ZnO) / cathode (silver-Ag), such as figure 2 shown.

[0050] The preparation process is as follows:

[0051] a. Put the ITO substrate used in tetrahydrofuran, isopropanol, washing solution, and deionized water for ultrasonic cleaning, and the ultrasonic time for each time is 10-20min. After the ultrasound is completed, place the ITO substrate in an oven to dry for later use.

[0052] b. Before the first hole injection layer (PEDOT:PSS) is pro...

Embodiment 3

[0060] The present invention will be further described with a specific example.

[0061] The device structure of this embodiment is: anode (graphene) / hole injection layer (phosphomolybdic acid-PMA) / hole transport layer (HTL) / green light emitting layer (G-QD) / electron transport layer (ZnO) / Hole injection layer (phosphomolybdic acid-PMA) / hole transport layer (HTL) / blue light emitting layer (B-QD) / electron transport layer (ZnO) / hole injection layer (phosphomolybdic acid-PMA) / hole Hole transport layer (HTL) / red light emitting layer (R-QD) / electron transport layer (ZnO) / cathode (silver-Ag), such as Figure 4 shown.

[0062] The preparation process is as follows:

[0063] a. Clean the graphene substrate in tetrahydrofuran, isopropanol, washing solution, and deionized water in sequence, and the ultrasonic time is 10-20 minutes each time. After the ultrasound is completed, place the graphene substrate in an oven to dry for later use.

[0064] b. before the first hole injection la...

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Abstract

A laminated white light emitting diode based on quantum dot electroluminescence and a preparation method thereof are provided. The device is composed of an anode, a cathode, and red, green and blue light emitting units laminated between the anode and the cathode. Two function layers connected between two adjacent light emitting units are connecting layers. Each connecting layer is composed of an electron transport layer in the lower light emitting unit and a hole injection layer in the upper light emitting unit. The hole injection layers serving as the connecting layers are polyoxometallate films, and the electron transport layers serving as the connecting layers are n-type metal oxide nanoparticle films. Each connecting layer is composed of a low-work-function electron donor (the electrontransport layer) and a high-work-function electron acceptor (the hole injection layer). The connecting layers have good solvent barrier ability, high transmittance in the visible light range and efficient charge generation and separation ability. Therefore, an efficient laminated device is obtained.

Description

technical field [0001] The invention relates to the field of flat panel display technology, in particular to a quantum dot electroluminescence-based stacked white light-emitting diode and a preparation method thereof. Background technique [0002] At present, the field of flat panel display is developing rapidly. Quantumdot Light Emitting Diode (QLED) is known as the next generation of organic light emitting devices due to its advantages such as wide color gamut, high color purity, good stability, low power consumption, and low cost. A new generation of lighting devices. The most common quantum dot organic electroluminescent device structure is a quantum dot layer of tens of nanometers sandwiched between two electrodes, and a DC voltage is applied to it to achieve light emission. With the development of organic light-emitting diode technology, in order to improve the device performance, the structure of the device is becoming more and more complex, but the basic light-emitt...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/11H10K2101/10H10K50/131H10K71/00
Inventor 彭俊彪江从彪邹建华王磊何志伟钟镇基穆兰
Owner SOUTH CHINA UNIV OF TECH
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