Formation method of semiconductor structure

Abstract

A formation method of a semiconductor structure comprises the steps of providing a substrate; forming an interface layer on the substrate; and performing a film layer formation process on the substrate for at least one time, and forming a high-k grid dielectric layer on the interface layer, wherein step of the film layer formation process comprises the steps of forming an intermediate high-k griddielectric layer on the interface layer by a chlorine-containing precursor; performing plasma processing on the intermediate high-k grid dielectric layer by employing a hydrogen-containing gas; and forming a grid electrode layer on the high-k grid dielectric layer. After forming the intermediate high-k grid electric layer and under plasmas processing, H atoms with high energy can be absorbed to Climpurity atoms in the intermediate high-k grid dielectric layer, the Cl impurity atoms deviate from a surface of the intermediate high-k grid dielectric layer, so that the content of the Cl impurityatoms in the finally-formed high-k grid dielectric layer is reduced to 0; and moreover, other impurity elements are not introduced, so that the interface performance between the high-k grid electric layer and the interface layer is improved, and the equivalent grid oxygen thickness of the high-k grid electric layer is reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for forming a semiconductor structure. Background technique [0002] The main semiconductor device of an integrated circuit, especially a very large scale integrated circuit, is a metal-oxide-semiconductor field effect transistor (MOS transistor). With the continuous development of integrated circuit manufacturing technology, the technology nodes of semiconductor devices continue to decrease, and the geometric dimensions of semiconductor devices follow Moore's law. When the size of semiconductor devices is reduced to a certain extent, various secondary effects caused by the physical limits of semiconductor devices appear one after another, and it becomes more and more difficult to scale down the feature size of semiconductor devices. Among them, in the field of semiconductor manufacturing, the most challenging thing is how to solve the problem of large leakage current of s...

AI Technical Summary

Problems solved by technology

[0004] Although the introduction of high-k metal gates can improve the electrical performance of semiconductor devices to a certain extent, the electrical performance of semiconductor devices formed by the prior art still needs to be improved.

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