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Preparation method of g-C3N4/g-C3N4 non-metallic isomeric knot as well as obtained product and application

A kind of isomeric, g-c3n4 technology, applied in the production of hydrogen, non-metallic elements, hydrogen/syngas production, etc., can solve the problems of unfavorable environment, dangerous reagents, large amount of waste water, etc., and achieves good environmental protection and low cost. Low, easy-to-control effects

Active Publication Date: 2018-06-08
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] For the preparation of isotype g-C in the prior art 3 N 4 The risk of reagents in the heterogeneous structure, the liquid phase reaction produces a large amount of waste water, and the disadvantages to the environment. The present invention provides a g-C 3 N 4 / g -C 3 N 4 A method for the preparation of metal-free heterostructures utilizing g-C calcined at different temperatures 3 N 4 With different band gaps and crystallinity characteristics, the g-C formed at different temperatures 3 N 4 Compounded, got g-C 3 N 4 / g -C 3 N 4 No metal Type heterojunction, the method has a single raw material, the reaction is carried out in the solid phase, no solvent and surfactant are needed, the operation is simple and safe, no waste water is generated, and the environmental protection is good

Method used

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  • Preparation method of g-C3N4/g-C3N4 non-metallic isomeric knot as well as obtained product and application
  • Preparation method of g-C3N4/g-C3N4 non-metallic isomeric knot as well as obtained product and application
  • Preparation method of g-C3N4/g-C3N4 non-metallic isomeric knot as well as obtained product and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1.1 Raise 2 g of melamine to a temperature of 600 °C at a heating rate of 2 °C / min, and calcinate it for 2 hours under an argon atmosphere to obtain g-C at 600 °C 3 N 4 (i.e. initial g-C 3 N 4 , the same below), spare;

[0030] 1.2 Take 2g of g-C prepared in step (1) at 600 °C 3 N 4 , raised to 750 °C at a heating rate of 2 °C / min, and calcined for 1 h in an argon atmosphere to obtain g-C at 750 °C 3 N 4 ,spare;

[0031] 1.3 Take 0.010 g of the sample prepared in step (2) (750 °C g-C 3 N 4 ) and 2g of melamine are mixed evenly, and the temperature is raised to 650 ℃ at a heating rate of 2 ℃ / min, and calcined in an argon atmosphere for 2 hours, and the calcined product is g-C 3 N 4（650 ℃） / g -C 3 N 4（750 ℃） Nanosheets (i.e. g-C 3 N 4 / g -C 3 N 4 metal-free heterostructure), with a size of 2-5 micrometers and a thickness of 3-5 nanometers. figure 1 It is a high-resolution transmission electron microscope (HRTEM) photo of the obtained nanosheets. It can be...

Embodiment 2

[0033] Prepare g-C according to the method for embodiment 1 3 N 4 / g -C 3 N 4 Metal-free homogeneous structure, the difference is: take 0.010g of g-C at 750°C 3 N 4 Mix evenly with 2g of melamine, raise the temperature to 550°C at a heating rate of 2°C / min, and calcinate for 2 hours under an argon atmosphere, and the calcined product is g-C 3 N 4（550 ℃） / g -C 3 N 4（750 ℃） Nanosheets with a size of 5-10 microns and a thickness of 70-100 nanometers. After the BET test, the specific surface area of ​​the obtained product is 32.3 m 2 . g -1 .

Embodiment 3

[0035] Prepare g-C according to the method for embodiment 1 3 N 4 / g -C 3 N 4 Metal-free homogeneous structure, the difference is: take 0.010g of g-C at 750°C 3 N 4 Mix evenly with 2g of melamine, raise the temperature to 600°C at a heating rate of 2°C / min, and calcinate for 2 hours under an argon atmosphere, and the calcined product is g-C 3 N 4（600 ℃） / g -C 3 N 4（750 ℃） Nanosheets with a size of 3-7 microns and a thickness of 20-40 nanometers. After the BET test, the specific surface area of ​​the obtained product is 50.7 m 2 . g -1 .

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Abstract

The invention discloses a preparation method of a g-C3N4 / g-C3N4 non-metallic isomeric knot as well as the obtained product and application. The preparation process is as follows: calcining a nitrogen-containing precursor at 550 to 600 DEG C to obtain initial g-C3N4, and calcining the g-C3N4 at 700 to 750 DEG C to obtain high-temperature g-C3N4; and mixing the high-temperature g-C3N4 and melamine uniformly, and calcining at the temperature of 550 to 650 DEG C to obtain the final product. The preparation process is simple, low in cost and high repeatability. The g-C3N4 has high stability; furthermore, the prepared g-C3N4 / g-C3N4 product has the characteristics of high dispersibility and large specific surface area, and has important significance in actual application such as large-scale industrialized production, photocatalytic degradation of organic matters and hydrogen production through water splitting.

Description

technical field [0001] The present invention relates to a g-C 3 N 4 / g -C 3 N 4 Preparation method of metal-free homogeneous structure and g-C prepared according to the method 3 N 4 / g -C 3 N 4 The metal-free homogeneous structure and application thereof belong to the technical field of carbon nitride homogeneous structure. Background technique [0002] As a promising technology, semiconductor photocatalysts have broad applications in solving environmental crisis and solar energy conversion, especially visible light-driven photocatalysts have attracted extensive research interest. It is well known that TiO 2 The relatively large band gap of photocatalysts and the rapid recombination of photogenerated electron-hole pairs limit their photocatalytic activity under visible light. Therefore, it is crucial to find a new type of photocatalytic material that responds to visible light. Graphite carbon nitride (g-C 3 N 4 ) as a metal-ion-free organic visible light-driven s...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/24B01J35/02B01J35/10C01B3/04B82Y40/00B82Y30/00C02F1/30C02F101/30C02F101/38C02F101/34B01J35/00
CPCB82Y30/00B82Y40/00C01B3/042C02F1/30B01J27/24C01B2203/0277C01B2203/1041C01B2203/1088C02F2305/10C02F2101/34C02F2101/30C02F2101/38B01J35/00B01J35/30B01J35/613B01J35/39Y02E60/36
Inventor 杨萍刘志国
Owner UNIV OF JINAN