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A kind of preparation method of g-c3n4/g-c3n4 metal-free homogeneous structure and its products and applications

A homogeneous isomerization, g-c3n4 technology, applied in the production of hydrogen, non-metallic elements, chemical instruments and methods, etc., can solve the problems of dangerous reagents, large amounts of waste water, unfavorable environment, etc., and achieve low cost and good environmental protection , good repeatability

Active Publication Date: 2020-05-26
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For the preparation of isotype g-C in the prior art 3 N 4 The risk of reagents in the heterogeneous structure, the liquid phase reaction produces a large amount of waste water, and the disadvantages to the environment. The present invention provides a g-C 3 N 4 / g -C 3 N 4 A method for the preparation of metal-free heterostructures utilizing g-C calcined at different temperatures 3 N 4 With different band gaps and crystallinity characteristics, the g-C formed at different temperatures 3 N 4 Compounded, got g-C 3 N 4 / g -C 3 N 4 No metal Type heterojunction, the method has a single raw material, the reaction is carried out in the solid phase, no solvent and surfactant are needed, the operation is simple and safe, no waste water is generated, and the environmental protection is good

Method used

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  • A kind of preparation method of g-c3n4/g-c3n4 metal-free homogeneous structure and its products and applications
  • A kind of preparation method of g-c3n4/g-c3n4 metal-free homogeneous structure and its products and applications
  • A kind of preparation method of g-c3n4/g-c3n4 metal-free homogeneous structure and its products and applications

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1.1 Raise 2 g of melamine to a temperature of 600 ℃ at a heating rate of 2 ℃ / min, and calcinate in an argon atmosphere for 2 hours to obtain g-C at 600 ℃ 3 N 4 (Ie the initial g-C 3 N 4 , The same below), spare;

[0030] 1.2 Take 2g of g-C prepared in step (1) at 600 ℃ 3 N 4 , Increase to 750 ℃ ​​at a heating rate of 2 ℃ / min, and calcinate in an argon atmosphere for 1 hour to obtain g-C at 750 ℃ 3 N 4 ,spare;

[0031] 1.3 Take 0.010g of the sample prepared in step (2) (g-C at 750 ℃ 3 N 4 ) And 2g of melamine are mixed uniformly, and the temperature is increased to 650 ℃ at a heating rate of 2 ℃ / min, and then calcined in an argon atmosphere for 2 hours. The calcined product is g-C 3 N 4（650 ℃） / g-C 3 N 4（750 ℃） Nanosheet (ie g-C 3 N 4 / g-C 3 N 4 No metal isomeric junction), the size is 2-5 microns, and the thickness is 3-5 nanometers. figure 1 It is a high-resolution transmission electron microscope (HRTEM) photo of the obtained nanosheets. It can be seen from the figure that 7...

Embodiment 2

[0033] Prepare g-C according to the method of Example 1 3 N 4 / g-C 3 N 4 No metal isomeric junction, the difference is: take 0.010g of g-C at 750℃ 3 N 4 Mix it with 2g of melamine uniformly, raise it to a temperature of 550 ℃ at a heating rate of 2 ℃ / min, and calcinate in an argon atmosphere for 2 hours. The calcined product is g-C 3 N 4（550 ℃） / g-C 3 N 4（750 ℃） Nanosheets have a size of 5-10 microns and a thickness of 70-100 nanometers. After BET test, the specific surface area of ​​the obtained product is 32.3 m 2 . g -1 .

Embodiment 3

[0035] Prepare g-C according to the method of Example 1 3 N 4 / g-C 3 N 4 No metal isomeric junction, the difference is: take 0.010g of g-C at 750 ℃ 3 N 4 Mix well with 2g of melamine, raise the temperature to 600 ℃ at a heating rate of 2 ℃ / min, and calcinate in an argon atmosphere for 2 hours. The calcined product is g-C 3 N 4（600 ℃） / g-C 3 N 4（750 ℃） Nanosheets have a size of 3-7 microns and a thickness of 20-40 nanometers. After BET test, the specific surface area of ​​the obtained product is 50.7 m 2 . g -1 .

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Abstract

The invention discloses a g-C 3 N 4 / g‑C 3 N 4 Preparation method of metal-free isomorphic structure and the resulting products and applications. The preparation process is as follows: the nitrogen-containing precursor is calcined at 550-600°C to obtain the initial g-C 3 N 4 , change the initial g‑C 3 N 4 Calcined at 700‑750℃ to obtain high temperature g‑C 3 N 4 ;Change the high temperature g‑C 3 N 4 Mix it evenly with melamine, and then calcine it at a temperature of 550-650℃ to obtain the final product. The invention has simple preparation process, low cost and good repeatability. Due to g‑C 3 N 4 has good stability, and the prepared g‑C 3 N 4 / g‑C 3 N 4 The product has the characteristics of good dispersion and large specific surface area, which is of great significance in mass industrial production and practical applications such as photocatalytic degradation of organic matter and photolysis of water for hydrogen production.

Description

Technical field [0001] The present invention relates to a g-C 3 N 4 / g-C 3 N 4 Preparation method of metal-free isomeric junction and g-C prepared according to the method 3 N 4 / g-C 3 N 4 Metal-free isomeric junction and its application belong to the technical field of carbon nitride isomeric junction. Background technique [0002] As a very promising technology, semiconductor photocatalysts have broad applications in solving environmental crises and solar energy conversion. In particular, visible light-driven photocatalysts have widely attracted people's research interest. As we all know, TiO 2 The relatively large band gap of the photocatalyst and the rapid recombination of photogenerated electron-hole pairs limit its photocatalytic activity under visible light. Therefore, it is very important to find a new type of visible light-responsive photocatalytic material. Graphite phase carbon nitride (g-C 3 N 4 ) As a kind of organic visible light-driven semiconductor without metal i...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24B01J35/02B01J35/10C01B3/04B82Y40/00B82Y30/00C02F1/30C02F101/30C02F101/38C02F101/34B01J35/00
CPCB82Y30/00B82Y40/00C01B3/042C02F1/30B01J27/24C01B2203/0277C01B2203/1041C01B2203/1088C02F2305/10C02F2101/34C02F2101/30C02F2101/38B01J35/00B01J35/30B01J35/613B01J35/39Y02E60/36
Inventor 杨萍刘志国
Owner UNIV OF JINAN