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Photoresist stripping solution

A technology of photoresist and stripping solution, which is applied in photosensitive material processing, electrical components, semiconductor/solid-state device manufacturing, etc. It can solve problems such as insufficient performance, white turbidity and curing of the stripping solution, and achieve stability over time Excellent, excellent solubility effect

Inactive Publication Date: 2018-06-08
NAGASE CHEMTEX CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the performance of the alkanolamine as a solubilizing agent is not sufficient, and depending on the temperature of the stripping solution, the stripping solution may become cloudy, or the quaternary ammonium hydroxide in the stripping solution may be solidified, and high stability over time, Problems with uniform photoresist stripper

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1～14、 comparative example 15

[0068] Each component was mixed in the weight ratio shown in following Table 2, and the photoresist stripping liquid was obtained. About the obtained photoresist stripping liquid, the liquid state, resist stripping property, and temporal stability were evaluated by the method mentioned later. The results are shown in Table 2.

[0069] It should be noted that in Table 2, DMSO means dimethylsulfoxide, TMAH means tetramethylammonium hydroxide, EDA means ethylenediamine, DETA means diethylenetriamine, TETA means triethylenetetramine, TEPA stands for tetraethylenepentamine, PEHA stands for pentaethylenehexamine, and TEG stands for triethylene glycol.

[0070]

Embodiment 15～27

[0072] Each component was mixed in the weight ratio shown in following Table 3, and the photoresist stripping liquid was obtained. About the obtained photoresist stripping liquid, the liquid state, resist stripping property, and temporal stability were evaluated by the method mentioned later. The results are shown in Table 3.

[0073] It should be noted that in Table 3, DMSO represents dimethylsulfoxide, TMAH represents tetramethylammonium hydroxide, TETA represents triethylenetetramine, and TEG represents triethylene glycol.

[0074]

Embodiment 28～35

[0075] (Examples 28-35, Comparative Examples 16-20)

[0076] Each component was mixed in the weight ratio shown in following Table 4, and the photoresist stripping liquid was obtained. About the obtained photoresist stripping liquid, the liquid state, the SP value of a polyhydric alcohol etc., resist stripping property, and temporal stability were evaluated by the method mentioned later. The results are shown in Table 4.

[0077] It should be noted that in Table 4, DMSO stands for dimethylsulfoxide, TMAH stands for tetramethylammonium hydroxide, TETA stands for triethylenetetramine, EDA stands for ethylenediamine, MEA stands for monoethanolamine, and TEG stands for triethylenediamine alcohol.

[0078]

[0079] (Evaluation method)

[0080] 1. Liquid state

[0081] Regarding the photoresist stripping liquid, the presence or absence of precipitates and the fluidity of the liquid were visually observed, and evaluated according to the following criteria.

[0082] ◯: There i...

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Abstract

The purpose of the present invention is to provide a photoresist stripping solution that has an excellent ability to maintain the solubility of a quaternary ammonium hydroxide and excellent temporal stability while maintaining a sufficient ability to strip resists. The present invention pertains to a photoresist stripping solution characterized by including dimethyl sulfoxide, a quaternary ammonium hydroxide, an alkylene amine, and a polyhydric alcohol and / or a glycol ether having a molecular weight of 100 or less. The alkylene amine is preferably an ethylene amine represented by general formula (1) (in general formula (1), n is an integer from 1 to 5).

Description

technical field [0001] The present invention relates to a photoresist stripper. Background technique [0002] A semiconductor substrate or the like has an electrode structure provided with fine wiring, and a photoresist is used in the manufacturing process thereof. The electrode structure is produced, for example, as follows: a conductive metal layer such as aluminum or SiO 2 Coating a photoresist on an insulating film such as a film, exposing and developing it to form a resist pattern, and using the patterned resist as a mask to conduct a conductive metal layer or an insulating film, etc. After fine wiring is formed by etching, unnecessary photoresist is removed with a photoresist stripping liquid, thereby manufacturing. [0003] As such a photoresist stripping solution, Patent Document 1 and Patent Document 2 propose a stripping solution containing dimethyl sulfoxide, quaternary ammonium hydroxide, and alkanolamine. In Patent Document 1 and Patent Document 2, since quat...

Claims

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Application Information

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IPC IPC(8): G03F7/42H01L21/027H01L21/304
CPCG03F7/42H01L21/027H01L21/304
Inventor 西岛佳孝
Owner NAGASE CHEMTEX CORPORATION
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