MEMS (Micro-Electro-Mechanical Systems) gas sensor and preparation method thereof

A gas sensor and gas-sensing technology, applied in the field of MEMS gas sensor and its preparation, can solve the problems of stability and accuracy, high material consumption, poor consistency, etc., to ensure integrity and ductility, and reduce complexity , to avoid the effect of lattice mismatch

Inactive Publication Date: 2018-06-12
台州市吉吉知识产权运营有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The solid electrolyte CO gas sensor with temperature control device produced by traditional technology has the disadvantages of large volume, high material consumption, poor consistency, and high power consumption. However, miniaturization using MEMS technology can overcome these shortcomings. It is a solid electrolyte gas sensor. The inevitable trend of sensor development
For example, a Chinese patent application (201010218524.X) discloses a micro-cantilever gas sensor and its manufacturing method, using the gas-sensing and piezoresistive properties of organic / inorganic nanocomposite films, and using organic / inorganic nanocomposite films as a microcantilever The gas sensitive layer and piezoresistor of the beam gas sensor, but its stability and accuracy need to be improved

Method used

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  • MEMS (Micro-Electro-Mechanical Systems) gas sensor and preparation method thereof
  • MEMS (Micro-Electro-Mechanical Systems) gas sensor and preparation method thereof
  • MEMS (Micro-Electro-Mechanical Systems) gas sensor and preparation method thereof

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Embodiment 1

[0046] In this embodiment, a cantilever beam is taken as an example to specifically describe the MEMS gas sensor in the present invention. The MEMS gas sensor in this embodiment is manufactured by the following steps:

[0047] (1) Choose an N-type silicon wafer with a thickness of 200μm and a crystal orientation of (100) as the silicon-based substrate 1. The silicon-based substrate 1 is washed with propanol, ethanol, and deionized water in sequence, dried with acid The cleaning solution is cleaned, and then soaked in dilute hydrofluoric acid. The acidic cleaning solution is HCl:H with a mass ratio of 1:2:8 2 O 2 :H 2 O's mixed cleaning solution;

[0048] (2) such as figure 1 with figure 2 As shown, SiO is grown on a silicon substrate 2 Protective layer 2, then in SiO 2 Deposit SiN on the protective layer 2 by LPCVD x Polysilicon layer 3, in SiN x The cantilever beam contact area 4 and the capacitor area 5 are formed on the polysilicon layer 3 by photolithography;

[0049] (3) such a...

Embodiment 2

[0057] In this embodiment, a cantilever beam is taken as an example to specifically describe the MEMS gas sensor in the present invention. The MEMS gas sensor in this embodiment is manufactured by the following steps:

[0058] (1) Choose an N-type silicon wafer with a thickness of 170μm and a crystal orientation of (100) as the silicon-based substrate 1. The silicon-based substrate 1 is washed sequentially with propanol, ethanol, and deionized water, and then dried with acid The cleaning solution is cleaned, and then soaked in dilute hydrofluoric acid. The acidic cleaning solution is HCl:H with a mass ratio of 1:2:8 2 O 2 :H 2 O's mixed cleaning solution;

[0059] (2) such as figure 1 with figure 2 As shown, SiO is grown on a silicon substrate 2 Protective layer 2, then in SiO 2 Deposit SiN on the protective layer 2 by LPCVD x Polysilicon layer 3, in SiN x The cantilever beam contact area 4 and the capacitor area 5 are formed on the polysilicon layer 3 by photolithography;

[0060] ...

Embodiment 3

[0068] In this embodiment, a cantilever beam is taken as an example to specifically describe the MEMS gas sensor in the present invention. The MEMS gas sensor in this embodiment is manufactured by the following steps:

[0069] (1) Choose an N-type silicon wafer with a thickness of 180μm and a crystal orientation of (100) as the silicon-based substrate 1. The silicon-based substrate 1 is washed with propanol, ethanol, and deionized water in sequence, dried by acid The cleaning solution is cleaned, and then soaked in dilute hydrofluoric acid. The acidic cleaning solution is HCl:H with a mass ratio of 1:2:8 2 O 2 :H 2 O's mixed cleaning solution;

[0070] (2) such as figure 1 with figure 2 As shown, SiO is grown on a silicon substrate 2 Protective layer 2, then in SiO 2 Deposit SiN on the protective layer 2 by LPCVD x Polysilicon layer 3, in SiN x The cantilever beam contact area 4 and the capacitor area 5 are formed on the polysilicon layer 3 by photolithography;

[0071] (3) such as ...

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Abstract

The invention belongs to the technical field of gas sensors, and relates to an MEMS (Micro-Electro-Mechanical Systems) gas sensor and a preparation method thereof. The MEMS gas sensor disclosed by theinvention sequentially consists of a substrate, a micro-beam structure, and a gas-sensitive layer, and the gas-sensitive layer is prepared from a Li atom-doped few-layer black phosphorus material. The gas sensor disclosed by the invention can be used for detecting CO gas, and has higher stability and sensitivity.

Description

Technical field [0001] The invention belongs to the technical field of gas sensors, and relates to a MEMS gas sensor and a preparation method thereof. Background technique [0002] As a typical source of air pollution, the increasing amount of carbon monoxide CO is partly derived from natural factors and partly from human factors. With the continuous development of social industrialization and the continuous increase of urban traffic pressure, the range of CO pollution sources from human factors is increasing, ranging from chemical industry, transportation, to kitchen fume, fireworks, etc., so CO is in the atmosphere The proportion is getting higher and higher. Like the toxic gases in other atmospheric pollutants, CO is highly toxic. When the gas enters the human body, it is easily combined with hemoglobin in the blood, which greatly exceeds the binding speed of oxygen and hemoglobin, making hemoglobin carry The oxygen capacity is greatly reduced. CO in very low concentrations...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/22
CPCG01N27/227
Inventor 栾山
Owner 台州市吉吉知识产权运营有限公司
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