Processing method of metal nanonetwork flexible glass

A technology of metal nano-network and flexible glass, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as uneven distribution of silver nanowires, complex process, and increased contact resistance

Active Publication Date: 2018-06-19
(CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] At present, for the preparation of metal nano-network transparent conductive glass, there are mainly the following processes at home and abroad: (1) Use the pressure generated by rolling the rolling bar on the surface of the fixed substrate to disperse the silver nanowires AgNWs dropped on the surface of the substrate to form a thin film , these AgNWs electrodes can have different densities and surface resistances by controlling the concentration; however, this method cannot keep the extrusion force constant during the rolling process, resulting in uneven distribution of the silver nanowires and sp

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  • Processing method of metal nanonetwork flexible glass

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Effect test

Embodiment 1

[0028] Such as figure 1 Shown, the processing method of a kind of metal nano network flexible glass provided by the invention comprises the following steps:

[0029] S1, using silicon ceramics as the substrate, placing the substrate in the magnetron sputtering chamber, using Ar ions as the sputtering gas, O 2 As a reaction gas, the radio frequency power supply acts on the cathode, and the preparation temperature is kept at room temperature; the sputtering power is 250W, the working pressure is 0.5Pa, the target voltage is 87V, and the distance between the substrate and the target is 70mm, and the prepared SiO 2 A sacrificial layer with a film thickness of 300nm.

[0030] S2, using magnetron sputtering method, on SiO 2 GZO film was prepared on the film as a cover layer, GZO ceramic target was used, Ar ions were used as sputtering gas, DC power was applied to the cathode, sputtering power was 300W, working pressure was 0.2Pa, target voltage was 419V, glass substrate and target...

Embodiment 2

[0039] The processing method of a metal nano-network flexible glass provided by the invention comprises the following steps:

[0040] S1, using silicon ceramics as the substrate, placing the substrate in the magnetron sputtering chamber, using Ar ions as the sputtering gas, O 2As a reaction gas, the radio frequency power supply acts on the cathode, and the preparation temperature is kept at room temperature; the sputtering power is 250W, the working pressure is 0.5Pa, the target voltage is 87V, and the distance between the substrate and the target is 70mm, and the prepared SiO 2 A sacrificial layer with a film thickness of 300nm.

[0041] S2, using the magnetron sputtering method, on SiO 2 AZO film was prepared on the film as a cover layer, AZO ceramic target was used, Ar ions were used as sputtering gas, DC power was applied to cathode, sputtering power was 350W, working pressure was 0.2Pa, target voltage was 441V, glass substrate and target The distance between the materia...

Embodiment 3

[0050] The processing method of a metal nano-network flexible glass provided by the invention comprises the following steps:

[0051] S1, using silicon ceramics as the substrate, placing the substrate in the magnetron sputtering chamber, using Ar ions as the sputtering gas, O 2 As a reaction gas, the radio frequency power supply acts on the cathode, and the preparation temperature is kept at room temperature; the sputtering power is 250W, the working pressure is 0.5Pa, the target voltage is 87V, and the distance between the substrate and the target is 70mm, and the prepared SiO 2 A sacrificial layer with a film thickness of 300nm.

[0052] S2, using the magnetron sputtering method, on SiO 2 The ZnO thin film was prepared on the thin film as a cover layer, ZnO ceramic target was used, Ar ions were used as sputtering gas, DC power was applied to the cathode, the sputtering power was 400W, the working pressure was 0.2Pa, the target voltage was 468V, the glass substrate and the t...

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Abstract

The invention relates to a processing method of metal nanonetwork flexible glass. The processing method comprises the following steps of preparing a SiO2 film on a silicon wafer as a sacrificial layer; preparing a GZO film, an AZO film or a ZnO film on the sacrificial layer as a cover layer; adding dropwise dilute HNO3 on the cover layer so as to erode the cover layer, so that intergranular cracksare obtained; then adding dropwise HF so as to erode the SiO2 film under the intergranular cracks; sputtering and growing an Ag metal film; soaking in HCl so as to remove the GZO film from the coverlayer; soaking in HF so as to remove the SiO2 film, so that a metal Ag nanonetwork is obtained; and transferring to a PET flexible transparent substrate coated with EVA optical cement, so that the metal nanonetwork transparent conductive glass is obtained. The processing method has the advantages that on the basis of the large-particle GZO film, the AZO film or the ZnO film which is developed andobtained, magnetron sputtering and wet etching are combined, so that the metal nanonetwork transparent conductive glass which has the advantages of easiness in adjusting and controlling the metal nanonetwork structure and simplicity and convenience in manufacturing is obtained.

Description

technical field [0001] The invention relates to the technical field of glass processing, in particular to a processing method of metal nano network flexible glass. Background technique [0002] High-performance transparent electrodes are essential in many optoelectronic devices, such as touch screens, photovoltaic cells, optoelectronic detectors, photovoltaic devices, thin film (photo) transistors, liquid crystal displays, sensors, thermal reflectors, etc. At present, transparent conductive electrodes generally use metal oxides, such as ITO films, but the key metal element indium in ITO oxide electrodes has limited reserves. With the popularity of products such as liquid crystal displays and touch screens, the price of indium has risen sharply. At the same time, indium tin oxide transparent electrodes lack flexibility, are not easy to bend, and have poor chemical stability, so they are not suitable for flexible transparent electrodes. [0003] At present, researchers have b...

Claims

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Application Information

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IPC IPC(8): C23C14/35C23C14/08C23C14/14H01L21/306
Inventor 彭寿仲召进马立云崔介东操芳芳王萍萍高强赵凤阳曹欣单传丽石丽芬王巍巍倪嘉韩娜
Owner (CNBM) BENGBU DESIGN & RES INST FOR GLASS IND CO LTD
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