Processing method of metal nanonetwork flexible glass
A technology of metal nano-network and flexible glass, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve problems such as uneven distribution of silver nanowires, complex process, and increased contact resistance
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Embodiment 1
[0028] Such as figure 1 Shown, the processing method of a kind of metal nano network flexible glass provided by the invention comprises the following steps:
[0029] S1, using silicon ceramics as the substrate, placing the substrate in the magnetron sputtering chamber, using Ar ions as the sputtering gas, O 2 As a reaction gas, the radio frequency power supply acts on the cathode, and the preparation temperature is kept at room temperature; the sputtering power is 250W, the working pressure is 0.5Pa, the target voltage is 87V, and the distance between the substrate and the target is 70mm, and the prepared SiO 2 A sacrificial layer with a film thickness of 300nm.
[0030] S2, using magnetron sputtering method, on SiO 2 GZO film was prepared on the film as a cover layer, GZO ceramic target was used, Ar ions were used as sputtering gas, DC power was applied to the cathode, sputtering power was 300W, working pressure was 0.2Pa, target voltage was 419V, glass substrate and target...
Embodiment 2
[0039] The processing method of a metal nano-network flexible glass provided by the invention comprises the following steps:
[0040] S1, using silicon ceramics as the substrate, placing the substrate in the magnetron sputtering chamber, using Ar ions as the sputtering gas, O 2As a reaction gas, the radio frequency power supply acts on the cathode, and the preparation temperature is kept at room temperature; the sputtering power is 250W, the working pressure is 0.5Pa, the target voltage is 87V, and the distance between the substrate and the target is 70mm, and the prepared SiO 2 A sacrificial layer with a film thickness of 300nm.
[0041] S2, using the magnetron sputtering method, on SiO 2 AZO film was prepared on the film as a cover layer, AZO ceramic target was used, Ar ions were used as sputtering gas, DC power was applied to cathode, sputtering power was 350W, working pressure was 0.2Pa, target voltage was 441V, glass substrate and target The distance between the materia...
Embodiment 3
[0050] The processing method of a metal nano-network flexible glass provided by the invention comprises the following steps:
[0051] S1, using silicon ceramics as the substrate, placing the substrate in the magnetron sputtering chamber, using Ar ions as the sputtering gas, O 2 As a reaction gas, the radio frequency power supply acts on the cathode, and the preparation temperature is kept at room temperature; the sputtering power is 250W, the working pressure is 0.5Pa, the target voltage is 87V, and the distance between the substrate and the target is 70mm, and the prepared SiO 2 A sacrificial layer with a film thickness of 300nm.
[0052] S2, using the magnetron sputtering method, on SiO 2 The ZnO thin film was prepared on the thin film as a cover layer, ZnO ceramic target was used, Ar ions were used as sputtering gas, DC power was applied to the cathode, the sputtering power was 400W, the working pressure was 0.2Pa, the target voltage was 468V, the glass substrate and the t...
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