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SiC based single-phase quasi-Z-source inverter and power density increasing method thereof

A source inverter and inverter technology, applied in the field of SiC-based single-phase quasi-Z source inverter and its power density improvement, can solve the problem of passive device parameters, large volume and weight, and inverter power density Not advanced question

Pending Publication Date: 2018-06-19
刘钰山
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a single-phase quasi-Z source inverter based on SiC and its power density improvement method, which is used to solve the problem of current single-phase quasi-Z source inverter in order to reduce the double frequency component pulsating power on the AC side. Due to the influence of DC power supply, the parameters, volume and weight of passive components are too large, and the power density of the inverter is not high.

Method used

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  • SiC based single-phase quasi-Z-source inverter and power density increasing method thereof
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  • SiC based single-phase quasi-Z-source inverter and power density increasing method thereof

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Embodiment 1

[0052] figure 1 It is a schematic diagram of the connection structure of a traditional single-phase quasi-Z source inverter, figure 2 It is a schematic diagram of the connection structure of a SiC-based single-phase quasi-Z source inverter disclosed by the present invention. Such as figure 2 As shown, the single-phase quasi-Z source inverter disclosed in this embodiment includes: a DC power supply, a quasi-Z source network, a full SiC power module, a load branch and an active filter branch. The quasi-Z source network consists of two inductance L 1 and L2 , two capacitors C 1 and C 2 and a diode D 1 The connection is formed and embedded between the DC power supply and the inverter DC bus, and the full SiC power module consists of four inverter load power switch tubes S 1 ~S 4 And two active filter branch switches S 5 and S 6 The connection is formed, the inverter load power switch tube S 1 and S 2 , Inverter load power switch tube S 3 and S 4 And the active filte...

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Abstract

The invention discloses an SiC based single-phase quasi-Z-source inverter and a power density increasing method thereof. The single-phase quasi-Z-source inverter comprises a direct-current power supply, a quasi-Z-source network, a full SiC power module, a load circuit branch and an active filter circuit branch. The SiC based single-phase quasi-Z-source inverter transfers twice-frequency componentpulsed power in alternating-current output power into an energy storage capacitor of the active filter circuit branch by effectively controlling a switch tube of the active filter circuit branch, andtherefore, a quasi-Z-source network capacitor and an inductor on a direct-current side need to process pulsating voltage and current generated by high-frequency switching frequency only, a capacitor of the active filter circuit branch runs with alternating current to allow larger pulse, a value of the capacitor is greatly reduced compared with an electrolytic capacitor on the direct current side,a film capacitor can be used, and the service life is prolonged.

Description

technical field [0001] The invention relates to the technical field of power electronic conversion, in particular to a SiC-based single-phase quasi-Z source inverter and a method for increasing its power density. Background technique [0002] In recent years, the single-phase quasi-Z source inverter has attracted more and more researches on its application in photovoltaic power generation systems, because it overcomes the limitation of the boost ratio of traditional inverters with single-stage conversion, and has a wide photovoltaic voltage processing capacity. , and the direct state does not require dead zone control, which greatly simplifies debugging, reduces output side interference, and improves the stability of the inverter system. In addition to being an independent photovoltaic inverter, the single-phase quasi-Z source inverter can also be used as a basic module to form a quasi-Z source cascaded multilevel photovoltaic inverter. [0003] Scholars at home and abroad ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H02M7/5387H02M1/15
CPCH02M1/15H02M7/5387H02M1/0054Y02B70/10
Inventor 刘钰山
Owner 刘钰山