Intelligent chemical gas-phase reaction sedimentation device for preparing graphene

Abstract

The invention relates to an intelligent chemical gas-phase reaction sedimentation device for preparing graphene. The device comprises a furnace body. A reaction mechanism is arranged in the furnace body and comprises plane moving mechanism, a horizontal moving block, a telescopic mechanism, a rotating mechanism, a moving plate, a substrate and two clamping mechanisms. The plane moving mechanism comprises a first motor, a first connection rod, a second connection rod, a sliding plate and a lifting assembly. Each clamping mechanism comprises a connection assembly, a first gear, a spring and a clamping block. The rotating mechanism comprises a second motor and two rotating assemblies. Each rotating assembly comprises a second driving shaft, a second gear and a rack. According to the intelligent chemical gas-phase reaction sedimentation device for preparing graphene, the plane moving mechanism drives the substrate to do plane movement, reaction gas is reacted at each position of the substrate, it is ensured that graphene sedimentation is uniform, furthermore, the substrate is driven by the rotating assemblies to rotate by 180 degrees, accordingly, graphene can be evenly deposited on the two faces of the substrate, and the graphene yield is improved.

Description

technical field [0001] The invention relates to the field of new material production equipment, in particular to an intelligent chemical vapor phase reaction deposition device for preparing graphene. Background technique [0002] Graphene is a honeycomb planar film formed by carbon atoms in a specific way. It is a quasi-two-dimensional material with only one atomic layer thickness, so it is also called monoatomic layer graphite. At present, the common powder production methods of graphene are mechanical glass method, redox method, silicon carbide epitaxial growth method, etc., and the thin film production method is chemical vapor deposition (CVD), among which CVD method can prepare high-quality large-area graphene , to meet the requirements of large-scale preparation of high-quality graphene. [0003] When the CVD method is used to prepare graphene, nickel is usually used as the substrate, and carbon-containing gases, such as hydrocarbons, are introduced into the deposition...

AI Technical Summary

Problems solved by technology

When the existing chemical vapor deposition reaction device uses the CVD method to prepare graphene, since the position of the substrate in the reaction furnace is fixed, and the entry position of the carbon-containing gas is also fixed, the deposition reaction mainly depends on the dispersion of the carbon-containing gas. The carbon-containing gas is unevenly distributed in the furnace body, resulting in uneven distribution of graphene deposited on the substrate. At the same time, on the side of the substrate away from the intake pipe, due to the small distribution of reaction gas, the amount of graphene deposited on this side is small. The equipment cannot make full use of the substrate to prepare evenly distributed graphene

Images