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Electrode-free bismuth telluride thermoelectric device and preparation method thereof

A thermoelectric device, bismuth telluride technology, which is applied in the manufacture/processing of thermoelectric devices, and the material of thermoelectric device junction lead wires, etc., can solve the problems of complex and difficult electrode preparation, and achieves overcoming the complex preparation process and good thermal stability. , the effect of shortening the preparation cycle

Active Publication Date: 2018-07-03
WUHAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] The characteristic of the present invention is that the integration of materials and devices is realized by artificially constructing bismuth telluride thermoelectric materials with tilted structure, which not only solves the complicated and difficult problem of electrode preparation in traditional π-type thermoelectric devices, but also greatly reduces the heterogeneous interface ( electrode and barrier layer, barrier layer and transition layer, transition layer and thermoelectric material) to improve the thermal stability of the device

Method used

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  • Electrode-free bismuth telluride thermoelectric device and preparation method thereof
  • Electrode-free bismuth telluride thermoelectric device and preparation method thereof
  • Electrode-free bismuth telluride thermoelectric device and preparation method thereof

Examples

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Effect test

Embodiment 1

[0044] A bismuth telluride thermoelectric device without electrodes and a preparation method thereof, comprising the following steps:

[0045] 1) Preparation of bismuth telluride alloy powder by melting method:

[0046] (1) Composed as Bi by name 0.5 Sb 1.5 Te 3 The stoichiometric ratio of Bi powder (purity 99.999%) 3.2755g, Sb powder (purity 99.999%) 5.7248g and Te powder (purity 99.999%) 11.9998g were accurately weighed, evenly mixed and sealed in a vacuum less than 10 -1 In a quartz tube of MPa;

[0047] (2) Similarly, the nominal composition becomes Bi 2 Te 2.7 Se 0.3 The stoichiometric ratio of Bi powder (purity 99.999%) 11.1645g, Te powder (purity 99.999%) 9.2029g and Se powder (purity 99.999%) 0.6328g are accurately weighed, evenly mixed and sealed in a vacuum less than 10 -1 In a quartz tube of MPa;

[0048] (3) The above-mentioned quartz tube is placed in a melting furnace, raised from room temperature to 900°C at a heating rate of 3°C / min, melted for 5 hours,...

Embodiment 2

[0063] 1) Preparation of bismuth telluride alloy powder by melting method:

[0064] (1) Composed as Bi by name 0.5 Sb 1.5 Te 3 The stoichiometric ratio of Bi powder (purity 99.999%) 4.8353g, Sb powder (purity 99.999%) 8.4509g and Te powder (purity 99.999%) 17.7141g were accurately weighed, evenly mixed and sealed in a vacuum less than 10 -1 In a quartz tube of MPa;

[0065] (2) Similarly, the nominal composition becomes Bi 2 Te 2.7 Se 0.3 The stoichiometric ratio of Bi powder (purity 99.999%) 16.4811g, Te powder (purity 99.999%) 13.5852g and Se powder (purity 99.999%) 0.9341g are accurately weighed, evenly mixed and sealed in a vacuum less than 10 -1 In a quartz tube of MPa;

[0066] (3) The above-mentioned quartz tube is placed in a melting furnace, raised from room temperature to 800°C at a heating rate of 3°C / min, melted in vacuum for 10 hours, and quenched in oil to obtain p-type Bi 0.5 Sb 1.5 Te 3 and n-type Bi 2 Te 2.7 Se 0.3 Quenched castings of alloys;

[0...

Embodiment 3

[0082] A bismuth telluride thermoelectric device without electrodes and a preparation method thereof, comprising the following steps:

[0083] 1) Preparation of bismuth telluride alloy powder by melting method:

[0084] (1) Composed as Bi by name 0.5 Sb 1.5 Te 3 The stoichiometric ratio of Bi powder (purity 99.999%) 4.8353g, Sb powder (purity 99.999%) 8.4509g and Te powder (purity 99.999%) 17.7141g were accurately weighed, evenly mixed and sealed in a vacuum less than 10 -1 In a quartz tube of MPa;

[0085] (2) Similarly, the nominal composition becomes Bi 2 Te 2.7 Se 0.3 The stoichiometric ratio of Bi powder (purity 99.999%) 16.4811g, Te powder (purity 99.999%) 13.5852g and Se powder (purity 99.999%) 0.9341g are accurately weighed, evenly mixed and sealed in a vacuum less than 10 -1 In a quartz tube of MPa;

[0086] (3) The above-mentioned quartz tube is placed in a melting furnace, raised from room temperature to 900°C at a rate of 1°C / min, melted in vacuum for 5 hou...

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Abstract

The invention relates to an electrode-free bismuth telluride thermoelectric device and a preparation method thereof. The electrode-free bismuth telluride thermoelectric device is composed of ceramic substrates, an artificial slanted-structure bismuth telluride thermoelectric material and wires. The wires are connected to the left side and the right side of the artificial slanted-structure bismuthtelluride thermoelectric material; and ceramic substrate layers are arranged at the upper surface and lower surface of the artificial slanted-structure bismuth telluride thermoelectric material. The artificial slanted-structure bismuth telluride thermoelectric material is formed by alternative arrangement of p type bismuth telluride materials and n type bismuth telluride materials; certain included angles are formed between the p type bismuth telluride material and the bottom of the artificial slanted-structure bismuth telluride thermoelectric material and between the n type bismuth telluridematerial and the artificial slanted-structure bismuth telluride thermoelectric material. The p type bismuth telluride materials and n type bismuth telluride material is Bi0.5Sb1.5Te3 and the n type bismuth telluride material is Bi2Te2.7Se0.3. According to the invention, the preparation process for an electrode-free bismuth telluride thermoelectric device is simple; the thermal stability of the device is high; and controllability of processing is enhanced. The electrode-free bismuth telluride thermoelectric device can be applied to fields of the thermal sensor, electro-sensitive sensor, thermalradiation detector and self-powered micro-network node power generation.

Description

technical field [0001] The invention relates to an electrode-free bismuth telluride thermoelectric device and a preparation method thereof, in particular to a preparation process for integrating bismuth telluride thermoelectric materials and devices, and belongs to the field of thermoelectric conversion new energy materials. Background technique [0002] Thermoelectric materials are functional materials that use the movement of carriers inside a solid to achieve direct mutual conversion of thermal energy and electrical energy. With the continuous aggravation of global environmental pollution and energy crisis, more and more attention has been paid to the design and preparation of thermoelectric devices. Thermoelectric devices made of thermoelectric materials have the advantages of small size, long life, no pollution, and no moving parts. potential economic value. [0003] Traditional thermoelectric devices are composed of p-type and n-type semiconductor thermoelectric elem...

Claims

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Application Information

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IPC IPC(8): H01L35/16H01L35/34
CPCH10N10/852H10N10/01
Inventor 张清杰周洪宇牟欣魏平朱婉婷赵文俞
Owner WUHAN UNIV OF TECH
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