A Processing Method for Enlarging the Occupancy Ratio of Photoresist Grating Mask
A processing method and technology of photoresist, which are applied in the photoplate-making process of the pattern surface, the original for photomechanical processing, optics, etc., can solve the problems of high process conditions and high cost, and achieve low process conditions. , low cost, and the effect of steep side walls
Active Publication Date: 2020-11-24
ANHUI POLYTECHNIC UNIV
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[0006] An embodiment of the present invention provides a processing method for increasing the ratio of the photoresist grating mask, aiming to solve the problems of high process conditions and high cost in the existing method
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[0044] In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.
[0045] figure 1 A flowchart of a processing method for increasing the ratio of a photoresist grating mask provided by an embodiment of the present invention, the method includes the following steps:
[0046] S1, placing the substrate with the photoresist grating mask on the heating platform;
[0047] Such as figure 2 As shown, 1 is the substrate, 2 is the photoresist grating mask, and 3 is the heating platform. The bottom surface of the substrate is in contact with the heating platform, and the grating is placed upward. The heating platform is the KW-4AH-350 type glue baking machine of Kemet Com...
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The invention is suitable for the technical field of grating processing, and provides a processing method for enlarging a duty cycle of a photoresist grating mask. The processing method comprises thefollowing steps: placing a base with the photoresist grating mask on a heating platform; covering a PDMS (Polydimethylsiloxane) gasket on the surface of the photoresist grating mask, and preheating; unidirectionally rolling the PDMS gasket by a round bar in a stretching direction of a grating strip until enabling the PDMS gasket to be in complete contact with the photoresist grating mask; sequentially covering a thin paper piece and a glass substrate on the PDMS gasket; applying load to the glass substrate from top to bottom, and heating a grating base; cooling a grating until the temperatureis below than glass transition temperature of a photoresist, and sequentially unloading the load, the glass substrate and the thin paper piece; uncovering one end of the PDMS gasket, and slowly uncovering the whole PDMS gasket, thus obtaining the photoresist grating mask of which the duty cycle is enlarged. The photoresist grating mask obtained through the processing method disclosed by the invention is uniform in line thickness while the duty cycle is obviously enlarged, the line surface of the photoresist grating mask is flat, and the side wall is steep and straight.
Description
technical field [0001] The invention belongs to the technical field of grating micro-nano processing, and provides a processing method for increasing the ratio of the photoresist grating mask. Background technique [0002] X-ray self-supporting blazed transmission gratings have huge application demands in the fields of inertial confinement fusion plasma diagnosis, astrophysics and X-ray phase contrast imaging due to their advantages of broadband, high efficiency and high resolution. Holographic lithography-anisotropic wet etching of single crystal silicon is an important method for fabricating X-ray self-supporting blazed transmission gratings. A large grating mask can significantly increase the process tolerance of anisotropic wet etching of single crystal silicon and improve the success rate of grating fabrication. However, because the occupation ratio of the grating mask obtained by the holographic lithography technique is small, the work of increasing the occupation rat...
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IPC IPC(8): G03F1/68
CPCG03F1/68
Inventor 郑衍畅胡华奎王海杨春来
Owner ANHUI POLYTECHNIC UNIV