Unlock instant, AI-driven research and patent intelligence for your innovation.

Photoresist cleaning solution

A cleaning solution and photoresist technology, applied in optics, optomechanical equipment, photosensitive material processing, etc., can solve problems such as increasing metal corrosion, and achieve the effect of good application prospects

Pending Publication Date: 2018-07-06
ANJI MICROELECTRONICS (SHANGHAI) CO LTD
View PDF22 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, increasing the alkalinity and operating temperature of the cleaning solution and prolonging the cleaning time tend to increase the corrosion of the metal

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Photoresist cleaning solution
  • Photoresist cleaning solution
  • Photoresist cleaning solution

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 7

[0033] From Example 7 and Comparative Examples 7-1, 7-2, and 7-3, it can be seen that no polyol was added in Comparative Example 7-1, the metal corrosion rate increased, cleaning had no effect, and a small amount of copper oxide remained. In Comparative Example 7-2, no phenolic compound was added, the corrosion rate of the metal increased, the cleaning had no effect, and a small amount of copper oxide remained. In comparative example 7-3, neither polyhydric alcohol nor phenolic compound was added, the metal corrosion rate increased, cleaning had no effect, and more copper oxide remained. The combined use of polyols and phenolic compounds can effectively remove copper oxide on the wafer.

[0034] In summary, the positive and progressive effect of the present invention lies in: the cleaning solution of the present invention can more effectively remove photoresist residues by compounding polyhydric alcohols and phenolic compounds within a certain concentration range under the sam...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a photoresist cleaning solution, which comprises the following components by mass percent concentration: i, 0.1-6% of quaternary amine hydroxide, ii, 0.1-10% of hydramine, iii, 0.2-50% of polyhydric alcohols, iv, 0.1-5% of a phenolic compound and v, the balance of an organic solvent. The cleaning solution does not contain silane, is capable of effectively removing photoresist residues on a wafer, does not corrode base materials, such as metals copper, aluminum, titanium, tungsten and gold basically, has removal capacity on copper oxide and has a good application prospect in the field of semiconductor wafer cleaning.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing technology, in particular to a photoresist cleaning solution. Background technique [0002] Usually, in the semiconductor manufacturing process, it is necessary to form a photoresist mask on the surface of some materials, and transfer the pattern through the exposure process. However, after obtaining the desired pattern, it is necessary to strip off the remaining photoresist before proceeding to the next process. Also, it is often required in this process to completely remove unwanted photoresist without etching any substrate. [0003] At present, the photoresist cleaning solution is mainly composed of polar organic solvents, strong alkali and / or water, and the photoresist on the semiconductor wafer is removed by immersing the semiconductor wafer in the cleaning solution or rinsing the semiconductor wafer with the cleaning solution. For example, JP1998239865 discloses a cleaning soluti...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/42
CPCG03F7/422
Inventor 孙广胜刘兵徐海玉
Owner ANJI MICROELECTRONICS (SHANGHAI) CO LTD